Zinc vacancy and oxygen interstitial in ZnO revealed by sequential annealing and electron irradiation

Tutkimustuotos: Lehtiartikkeli

Tutkijat

  • K.E. Knutsen
  • A. Galeckas
  • A. Zubiaga
  • Filip Tuomisto

  • G.C. Farlow
  • B.G. Svensson
  • A.Yu. Kuznetsov

Organisaatiot

  • University of Oslo
  • Wright State University

Kuvaus

By combining results from positron annihilation and photoluminescence spectroscopy with data from Hall effect measurements, the characteristic deep level emission centered at ∼1.75 eV and exhibiting an activation energy of thermal quenching of 11.5 meV is associated with the zinc vacancy. Further, a strong indication that oxygen interstitials act as a dominating acceptor is derived from the analysis of charge carrier losses induced by electron irradiation with variable energy below and above the threshold for Zn-atom displacement. We also demonstrate that the commonly observed green emission is related to an extrinsic acceptorlike impurity, which may be readily passivated by oxygen vacancies.

Yksityiskohdat

AlkuperäiskieliEnglanti
Artikkeli121203
Sivut1-5
Sivumäärä5
JulkaisuPhysical Review B
Vuosikerta86
Numero12
TilaJulkaistu - syyskuuta 2012
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

    Tutkimusalat

  • photoluminescence, positron, vacancies, ZnO

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