Vacancy in DX Centers in Si and Sn doped AlGaAs

Jari Mäkinen, T. Laine, K. Saarinen, Pekka Hautojärvi, C. Corbel, Veli-Matti Airaksinen

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference article in proceedings › Scientific › vertaisarvioitu

Alkuperäiskieli	Englanti
Otsikko	17th International Conference on Defects in Semiconductors, Gmunden, Austria, July 18-23, 1993
Sivut	261-262
Tila	Julkaistu - 1993
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisussa

Tutkimusalat

@inproceedings{f573497d02704ec6b561541454247732,

title = "Vacancy in DX Centers in Si and Sn doped AlGaAs",

keywords = "AlGaAs, DX-center, vacancy, AlGaAs, DX-center, vacancy, AlGaAs, DX-center, vacancy",

author = "Jari M{\"a}kinen and T. Laine and K. Saarinen and Pekka Hautoj{\"a}rvi and C. Corbel and Veli-Matti Airaksinen",

year = "1993",

language = "English",

pages = "261--262",

booktitle = "17th International Conference on Defects in Semiconductors, Gmunden, Austria, July 18-23, 1993",

}

TY - GEN

T1 - Vacancy in DX Centers in Si and Sn doped AlGaAs

AU - Mäkinen, Jari

AU - Laine, T.

AU - Saarinen, K.

AU - Hautojärvi, Pekka

AU - Corbel, C.

AU - Airaksinen, Veli-Matti

PY - 1993

Y1 - 1993

KW - AlGaAs

KW - DX-center

KW - vacancy

KW - AlGaAs

KW - DX-center

KW - vacancy

KW - AlGaAs

KW - DX-center

KW - vacancy

M3 - Conference article in proceedings

SP - 261

EP - 262

BT - 17th International Conference on Defects in Semiconductors, Gmunden, Austria, July 18-23, 1993

ER -