Vacancy defects in GaAs and AlGaAs studied by positron spectroscopy under photoexcitation

K. Saarinen; J. Mäkinen; P. Hautojärvi; S. Kuisma; T. Laine; C. Corbel; C. LeBerre

Vacancy defects in GaAs and AlGaAs studied by positron spectroscopy under photoexcitation

K. Saarinen, J. Mäkinen, P. Hautojärvi, S. Kuisma, T. Laine, C. Corbel, C. LeBerre

Tietotekniikan laitos

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference article in proceedings › Scientific › vertaisarvioitu

Alkuperäiskieli	Englanti
Otsikko	The 10th International Conference on Positron Annihilation, Beijing, China, 1994
Tila	Julkaistu - 1994
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisussa

Tutkimusalat

III-V compound semiconductors
positron annihilation
vacancy

Siteeraa tätä

@inproceedings{78c124103bd54daba5cbc766d670075a,

title = "Vacancy defects in GaAs and AlGaAs studied by positron spectroscopy under photoexcitation",

keywords = "III-V compound semiconductors, positron annihilation, vacancy, III-V compound semiconductors, positron annihilation, vacancy, III-V compound semiconductors, positron annihilation, vacancy",

author = "K. Saarinen and J. M{\"a}kinen and P. Hautoj{\"a}rvi and S. Kuisma and T. Laine and C. Corbel and C. LeBerre",

year = "1994",

language = "English",

booktitle = "The 10th International Conference on Positron Annihilation, Beijing, China, 1994",

}

TY - GEN

T1 - Vacancy defects in GaAs and AlGaAs studied by positron spectroscopy under photoexcitation

AU - Saarinen, K.

AU - Mäkinen, J.

AU - Hautojärvi, P.

AU - Kuisma, S.

AU - Laine, T.

AU - Corbel, C.

AU - LeBerre, C.

PY - 1994

Y1 - 1994

KW - III-V compound semiconductors

KW - positron annihilation

KW - vacancy

KW - III-V compound semiconductors

KW - positron annihilation

KW - vacancy

KW - III-V compound semiconductors

KW - positron annihilation

KW - vacancy

M3 - Conference article in proceedings

BT - The 10th International Conference on Positron Annihilation, Beijing, China, 1994

ER -