Vacancy defects in epitaxial thin film CuGaSe2 and CuInSe2

Esa Korhonen; K. Kuitunen; F. Tuomisto; A. Urbaniak; M. Igalson; J. Larsen; L. Gütay; S. Siebentritt

doi:10.1103/PhysRevB.86.064102

Vacancy defects in epitaxial thin film CuGaSe₂ and CuInSe₂

Esa Korhonen, K. Kuitunen, F. Tuomisto, A. Urbaniak, M. Igalson, J. Larsen, L. Gütay, S. Siebentritt

Tutkimustuotos: Lehtiartikkeli › Article › Scientific › vertaisarvioitu

25 Sitaatiot (Scopus)

169 Lataukset (Pure)

Abstrakti

Epitaxial thin film CuGaSe2 and CuInSe2 samples grown on GaAs substrates with varying [Cu]/[Ga,In] ratios were studied using positron annihilation Doppler-broadening spectroscopy and were compared to bulk crystals. We find both Cu monovacancies and Cu-Se divacancies in CuInSe2, whereas, in CuGaSe2, the only observed vacancy defect is the Cu-Se divacancy.

Alkuperäiskieli	Englanti
Artikkeli	064102
Sivut	1-5
Sivumäärä	5
Julkaisu	Physical Review B
Vuosikerta	86
Numero	6
DOI - pysyväislinkit	https://doi.org/10.1103/PhysRevB.86.064102
Tila	Julkaistu - elokuuta 2012
OKM-julkaisutyyppi	A1 Julkaistu artikkeli, soviteltu

Tutkimusalat

CGS
CIGS
CIS
positron

Pääsy asiakirjaan

10.1103/PhysRevB.86.064102

PhysRevB.86.064102Final published version, 340 KB

Siteeraa tätä

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title = "Vacancy defects in epitaxial thin film CuGaSe2 and CuInSe2",

abstract = "Epitaxial thin film CuGaSe2 and CuInSe2 samples grown on GaAs substrates with varying [Cu]/[Ga,In] ratios were studied using positron annihilation Doppler-broadening spectroscopy and were compared to bulk crystals. We find both Cu monovacancies and Cu-Se divacancies in CuInSe2, whereas, in CuGaSe2, the only observed vacancy defect is the Cu-Se divacancy.",

keywords = "CGS, CIGS, CIS, positron, CGS, CIGS, CIS, positron, CGS, CIGS, CIS, positron",

author = "Esa Korhonen and K. Kuitunen and F. Tuomisto and A. Urbaniak and M. Igalson and J. Larsen and L. G{\"u}tay and S. Siebentritt",

year = "2012",

month = aug,

doi = "10.1103/PhysRevB.86.064102",

language = "English",

volume = "86",

pages = "1--5",

journal = "Physical Review B (Condensed Matter and Materials Physics)",

issn = "2469-9950",

publisher = "American Physical Society",

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TY - JOUR

T1 - Vacancy defects in epitaxial thin film CuGaSe2 and CuInSe2

AU - Korhonen, Esa

AU - Kuitunen, K.

AU - Tuomisto, F.

AU - Urbaniak, A.

AU - Igalson, M.

AU - Larsen, J.

AU - Gütay, L.

AU - Siebentritt, S.

PY - 2012/8

Y1 - 2012/8

N2 - Epitaxial thin film CuGaSe2 and CuInSe2 samples grown on GaAs substrates with varying [Cu]/[Ga,In] ratios were studied using positron annihilation Doppler-broadening spectroscopy and were compared to bulk crystals. We find both Cu monovacancies and Cu-Se divacancies in CuInSe2, whereas, in CuGaSe2, the only observed vacancy defect is the Cu-Se divacancy.

AB - Epitaxial thin film CuGaSe2 and CuInSe2 samples grown on GaAs substrates with varying [Cu]/[Ga,In] ratios were studied using positron annihilation Doppler-broadening spectroscopy and were compared to bulk crystals. We find both Cu monovacancies and Cu-Se divacancies in CuInSe2, whereas, in CuGaSe2, the only observed vacancy defect is the Cu-Se divacancy.

KW - CGS

KW - CIGS

KW - CIS

KW - positron

KW - CGS

KW - CIGS

KW - CIS

KW - positron

KW - CGS

KW - CIGS

KW - CIS

KW - positron

U2 - 10.1103/PhysRevB.86.064102

DO - 10.1103/PhysRevB.86.064102

M3 - Article

VL - 86

SP - 1

EP - 5

JO - Physical Review B (Condensed Matter and Materials Physics)

JF - Physical Review B (Condensed Matter and Materials Physics)

SN - 2469-9950

IS - 6

M1 - 064102

ER -

Vacancy defects in epitaxial thin film CuGaSe2 and CuInSe2

Abstrakti

Tutkimusalat

Pääsy asiakirjaan

Sormenjälki

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Vacancy defects in epitaxial thin film CuGaSe₂ and CuInSe₂