Ultra-high on-chip optical gain in erbium-based hybrid slot waveguides

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

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Ultra-high on-chip optical gain in erbium-based hybrid slot waveguides. / Rönn, John; Zhang, Weiwei; Autere, Anton; Leroux, Xavier; Pakarinen, Lasse; Alonso-Ramos, Carlos; Säynätjoki, Antti; Lipsanen, Harri; Vivien, Laurent; Cassan, Eric; Sun, Zhipei.

julkaisussa: Nature Communications, Vuosikerta 10, Nro 1, 432, 25.01.2019.

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

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Rönn, J, Zhang, W, Autere, A, Leroux, X, Pakarinen, L, Alonso-Ramos, C, Säynätjoki, A, Lipsanen, H, Vivien, L, Cassan, E & Sun, Z 2019, 'Ultra-high on-chip optical gain in erbium-based hybrid slot waveguides' Nature Communications, Vuosikerta. 10, Nro 1, 432. https://doi.org/10.1038/s41467-019-08369-w, https://doi.org/10.1038/s41467-019-08369-w

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Author

Rönn, John ; Zhang, Weiwei ; Autere, Anton ; Leroux, Xavier ; Pakarinen, Lasse ; Alonso-Ramos, Carlos ; Säynätjoki, Antti ; Lipsanen, Harri ; Vivien, Laurent ; Cassan, Eric ; Sun, Zhipei. / Ultra-high on-chip optical gain in erbium-based hybrid slot waveguides. Julkaisussa: Nature Communications. 2019 ; Vuosikerta 10, Nro 1.

Bibtex - Lataa

@article{2631b9c376ea46d592b1ac4e142d0f39,
title = "Ultra-high on-chip optical gain in erbium-based hybrid slot waveguides",
abstract = "Efficient and reliable on-chip optical amplifiers and light sources would enable versatile integration of various active functionalities on the silicon platform. Although lasing on silicon has been demonstrated with semiconductors by using methods such as wafer bonding or molecular beam epitaxy, cost-effective mass production methods for CMOS-compatible active devices are still lacking. Here, we report ultra-high on-chip optical gain in erbium-based hybrid slot waveguides with a monolithic, CMOS-compatible and scalable atomic-layer deposition process. The unique layer-by-layer nature of atomic-layer deposition enables atomic scale engineering of the gain layer properties and straightforward integration with silicon integrated waveguides. We demonstrate up to 20.1 +/- 7.31 dB/cm and at least 52.4 +/- 13.8 dB/cm net modal and material gain per unit length, respectively, the highest performance achieved from erbium-based planar waveguides integrated on silicon. Our results show significant advances towards efficient on-chip amplification, opening a route to large-scale integration of various active functionalities on silicon.",
keywords = "SILICON, AMPLIFIERS, PHOTONICS, LASERS, STRIP, NM",
author = "John R{\"o}nn and Weiwei Zhang and Anton Autere and Xavier Leroux and Lasse Pakarinen and Carlos Alonso-Ramos and Antti S{\"a}yn{\"a}tjoki and Harri Lipsanen and Laurent Vivien and Eric Cassan and Zhipei Sun",
note = "| openaire: EC/FP7/631610/EU//GrabFast | openaire: EC/H2020/820423/EU//S2QUIP",
year = "2019",
month = "1",
day = "25",
doi = "10.1038/s41467-019-08369-w",
language = "English",
volume = "10",
journal = "Nature Communications",
issn = "2041-1723",
number = "1",

}

RIS - Lataa

TY - JOUR

T1 - Ultra-high on-chip optical gain in erbium-based hybrid slot waveguides

AU - Rönn, John

AU - Zhang, Weiwei

AU - Autere, Anton

AU - Leroux, Xavier

AU - Pakarinen, Lasse

AU - Alonso-Ramos, Carlos

AU - Säynätjoki, Antti

AU - Lipsanen, Harri

AU - Vivien, Laurent

AU - Cassan, Eric

AU - Sun, Zhipei

N1 - | openaire: EC/FP7/631610/EU//GrabFast | openaire: EC/H2020/820423/EU//S2QUIP

PY - 2019/1/25

Y1 - 2019/1/25

N2 - Efficient and reliable on-chip optical amplifiers and light sources would enable versatile integration of various active functionalities on the silicon platform. Although lasing on silicon has been demonstrated with semiconductors by using methods such as wafer bonding or molecular beam epitaxy, cost-effective mass production methods for CMOS-compatible active devices are still lacking. Here, we report ultra-high on-chip optical gain in erbium-based hybrid slot waveguides with a monolithic, CMOS-compatible and scalable atomic-layer deposition process. The unique layer-by-layer nature of atomic-layer deposition enables atomic scale engineering of the gain layer properties and straightforward integration with silicon integrated waveguides. We demonstrate up to 20.1 +/- 7.31 dB/cm and at least 52.4 +/- 13.8 dB/cm net modal and material gain per unit length, respectively, the highest performance achieved from erbium-based planar waveguides integrated on silicon. Our results show significant advances towards efficient on-chip amplification, opening a route to large-scale integration of various active functionalities on silicon.

AB - Efficient and reliable on-chip optical amplifiers and light sources would enable versatile integration of various active functionalities on the silicon platform. Although lasing on silicon has been demonstrated with semiconductors by using methods such as wafer bonding or molecular beam epitaxy, cost-effective mass production methods for CMOS-compatible active devices are still lacking. Here, we report ultra-high on-chip optical gain in erbium-based hybrid slot waveguides with a monolithic, CMOS-compatible and scalable atomic-layer deposition process. The unique layer-by-layer nature of atomic-layer deposition enables atomic scale engineering of the gain layer properties and straightforward integration with silicon integrated waveguides. We demonstrate up to 20.1 +/- 7.31 dB/cm and at least 52.4 +/- 13.8 dB/cm net modal and material gain per unit length, respectively, the highest performance achieved from erbium-based planar waveguides integrated on silicon. Our results show significant advances towards efficient on-chip amplification, opening a route to large-scale integration of various active functionalities on silicon.

KW - SILICON

KW - AMPLIFIERS

KW - PHOTONICS

KW - LASERS

KW - STRIP

KW - NM

UR - http://www.scopus.com/inward/record.url?scp=85060511596&partnerID=8YFLogxK

U2 - 10.1038/s41467-019-08369-w

DO - 10.1038/s41467-019-08369-w

M3 - Article

VL - 10

JO - Nature Communications

JF - Nature Communications

SN - 2041-1723

IS - 1

M1 - 432

ER -

ID: 31902332