Ultra low 1/f noise in suspended bilayer graphene

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Ultra low 1/f noise in suspended bilayer graphene. / Kumar, Manohar; Laitinen, Antti; Cox, Daniel; Hakonen, Pertti J.

julkaisussa: Applied Physics Letters, Vuosikerta 106, Nro 26, 263505, 2015, s. 1-5.

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

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Bibtex - Lataa

@article{bb0cc70cd5e04a2f8b4eed424ac1dd6a,
title = "Ultra low 1/f noise in suspended bilayer graphene",
abstract = "We have studied 1/f noise power SI in suspended bilayer graphene devices. Around the Dirac point, we observe ultra low noise amplitude on the order of f*SI/I2b=10−9 . The low frequency noise level is barely sensitive to intrinsic carrier density, but temperature and external doping are found to influence the noise power. In our current-annealed samples, the 1/f noise is dominated by resistance fluctuations at the contacts. Temperature dependence of the 1/f noise suggests the presence of trap states in the contact regions, with a nearly exponential distribution function displaying a characteristic energy of 0.12 eV. At 80 K, the noise displays an air pressure sensitivity that corresponds to ∼0.3 ppm gas detection sensitivity; this indicates the potential of suspended graphene as a platform for gas sensing applications.",
author = "Manohar Kumar and Antti Laitinen and Daniel Cox and Hakonen, {Pertti J.}",
note = "VK: Low Temperature Laboratory",
year = "2015",
doi = "10.1063/1.4923190",
language = "English",
volume = "106",
pages = "1--5",
journal = "Applied Physics Letters",
issn = "0003-6951",
number = "26",

}

RIS - Lataa

TY - JOUR

T1 - Ultra low 1/f noise in suspended bilayer graphene

AU - Kumar, Manohar

AU - Laitinen, Antti

AU - Cox, Daniel

AU - Hakonen, Pertti J.

N1 - VK: Low Temperature Laboratory

PY - 2015

Y1 - 2015

N2 - We have studied 1/f noise power SI in suspended bilayer graphene devices. Around the Dirac point, we observe ultra low noise amplitude on the order of f*SI/I2b=10−9 . The low frequency noise level is barely sensitive to intrinsic carrier density, but temperature and external doping are found to influence the noise power. In our current-annealed samples, the 1/f noise is dominated by resistance fluctuations at the contacts. Temperature dependence of the 1/f noise suggests the presence of trap states in the contact regions, with a nearly exponential distribution function displaying a characteristic energy of 0.12 eV. At 80 K, the noise displays an air pressure sensitivity that corresponds to ∼0.3 ppm gas detection sensitivity; this indicates the potential of suspended graphene as a platform for gas sensing applications.

AB - We have studied 1/f noise power SI in suspended bilayer graphene devices. Around the Dirac point, we observe ultra low noise amplitude on the order of f*SI/I2b=10−9 . The low frequency noise level is barely sensitive to intrinsic carrier density, but temperature and external doping are found to influence the noise power. In our current-annealed samples, the 1/f noise is dominated by resistance fluctuations at the contacts. Temperature dependence of the 1/f noise suggests the presence of trap states in the contact regions, with a nearly exponential distribution function displaying a characteristic energy of 0.12 eV. At 80 K, the noise displays an air pressure sensitivity that corresponds to ∼0.3 ppm gas detection sensitivity; this indicates the potential of suspended graphene as a platform for gas sensing applications.

UR - http://dx.doi.org/10.1063/1.4923190

U2 - 10.1063/1.4923190

DO - 10.1063/1.4923190

M3 - Article

VL - 106

SP - 1

EP - 5

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 26

M1 - 263505

ER -

ID: 2019612