Tribological properties of thin films made by atomic layer deposition sliding against silicon

Tutkimustuotos: Lehtiartikkeli

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Tribological properties of thin films made by atomic layer deposition sliding against silicon. / Kilpi, Lauri; Ylivaara, Oili M.E.; Vaajoki, Antti; Liu, Xuwen; Rontu, Ville; Sintonen, Sakari; Haimi, Eero; Malm, Jari; Bosund, Markus; Tuominen, Marko; Sajavaara, Timo; Lipsanen, Harri; Hannula, Simo Pekka; Puurunen, Riikka L.; Ronkainen, Helena.

julkaisussa: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vuosikerta 36, Nro 1, 01A122, 01.01.2018.

Tutkimustuotos: Lehtiartikkeli

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Kilpi, Lauri ; Ylivaara, Oili M.E. ; Vaajoki, Antti ; Liu, Xuwen ; Rontu, Ville ; Sintonen, Sakari ; Haimi, Eero ; Malm, Jari ; Bosund, Markus ; Tuominen, Marko ; Sajavaara, Timo ; Lipsanen, Harri ; Hannula, Simo Pekka ; Puurunen, Riikka L. ; Ronkainen, Helena. / Tribological properties of thin films made by atomic layer deposition sliding against silicon. Julkaisussa: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 2018 ; Vuosikerta 36, Nro 1.

Bibtex - Lataa

@article{18165c57ed36409489e9117b12f0584f,
title = "Tribological properties of thin films made by atomic layer deposition sliding against silicon",
abstract = "Interfacial phenomena, such as adhesion, friction, and wear, can dominate the performance and reliability of microelectromechanical (MEMS) devices. Here, thin films made by atomic layer deposition (ALD) were tested for their tribological properties. Tribological tests were carried out with silicon counterpart sliding against ALD thin films in order to simulate the contacts occurring in the MEMS devices. The counterpart was sliding in a linear reciprocating motion against the ALD films with the total sliding distances of 5 and 20 m. Al2O3 and TiO2 coatings with different deposition temperatures were investigated in addition to Al2O3-TiO2-nanolaminate, TiN, NbN, TiAlCN, a-C:H [diamondlike carbon (DLC)] coatings, and uncoated Si. The formation of the tribolayer in the contact area was the dominating phenomenon for friction and wear performance. Hardness, elastic modulus, and crystallinity of the materials were also investigated. The nitride coatings had the most favorable friction and wear performance of the ALD coatings, yet lower friction coefficient was measured with DLC a-C:H coating. These results help us to take steps toward improved coating solutions in, e.g., MEMS applications.",
author = "Lauri Kilpi and Ylivaara, {Oili M.E.} and Antti Vaajoki and Xuwen Liu and Ville Rontu and Sakari Sintonen and Eero Haimi and Jari Malm and Markus Bosund and Marko Tuominen and Timo Sajavaara and Harri Lipsanen and Hannula, {Simo Pekka} and Puurunen, {Riikka L.} and Helena Ronkainen",
year = "2018",
month = "1",
day = "1",
doi = "10.1116/1.5003729",
language = "English",
volume = "36",
journal = "JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A",
issn = "0734-2101",
publisher = "AVS Science and Technology Society",
number = "1",

}

RIS - Lataa

TY - JOUR

T1 - Tribological properties of thin films made by atomic layer deposition sliding against silicon

AU - Kilpi, Lauri

AU - Ylivaara, Oili M.E.

AU - Vaajoki, Antti

AU - Liu, Xuwen

AU - Rontu, Ville

AU - Sintonen, Sakari

AU - Haimi, Eero

AU - Malm, Jari

AU - Bosund, Markus

AU - Tuominen, Marko

AU - Sajavaara, Timo

AU - Lipsanen, Harri

AU - Hannula, Simo Pekka

AU - Puurunen, Riikka L.

AU - Ronkainen, Helena

PY - 2018/1/1

Y1 - 2018/1/1

N2 - Interfacial phenomena, such as adhesion, friction, and wear, can dominate the performance and reliability of microelectromechanical (MEMS) devices. Here, thin films made by atomic layer deposition (ALD) were tested for their tribological properties. Tribological tests were carried out with silicon counterpart sliding against ALD thin films in order to simulate the contacts occurring in the MEMS devices. The counterpart was sliding in a linear reciprocating motion against the ALD films with the total sliding distances of 5 and 20 m. Al2O3 and TiO2 coatings with different deposition temperatures were investigated in addition to Al2O3-TiO2-nanolaminate, TiN, NbN, TiAlCN, a-C:H [diamondlike carbon (DLC)] coatings, and uncoated Si. The formation of the tribolayer in the contact area was the dominating phenomenon for friction and wear performance. Hardness, elastic modulus, and crystallinity of the materials were also investigated. The nitride coatings had the most favorable friction and wear performance of the ALD coatings, yet lower friction coefficient was measured with DLC a-C:H coating. These results help us to take steps toward improved coating solutions in, e.g., MEMS applications.

AB - Interfacial phenomena, such as adhesion, friction, and wear, can dominate the performance and reliability of microelectromechanical (MEMS) devices. Here, thin films made by atomic layer deposition (ALD) were tested for their tribological properties. Tribological tests were carried out with silicon counterpart sliding against ALD thin films in order to simulate the contacts occurring in the MEMS devices. The counterpart was sliding in a linear reciprocating motion against the ALD films with the total sliding distances of 5 and 20 m. Al2O3 and TiO2 coatings with different deposition temperatures were investigated in addition to Al2O3-TiO2-nanolaminate, TiN, NbN, TiAlCN, a-C:H [diamondlike carbon (DLC)] coatings, and uncoated Si. The formation of the tribolayer in the contact area was the dominating phenomenon for friction and wear performance. Hardness, elastic modulus, and crystallinity of the materials were also investigated. The nitride coatings had the most favorable friction and wear performance of the ALD coatings, yet lower friction coefficient was measured with DLC a-C:H coating. These results help us to take steps toward improved coating solutions in, e.g., MEMS applications.

UR - http://www.scopus.com/inward/record.url?scp=85040109619&partnerID=8YFLogxK

U2 - 10.1116/1.5003729

DO - 10.1116/1.5003729

M3 - Article

VL - 36

JO - JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A

JF - JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A

SN - 0734-2101

IS - 1

M1 - 01A122

ER -

ID: 17106022