Transport properties of EuO at ferromagnetic resonance

Kimmo Kaski, P. Kuivalainen, T. Stubb

Tutkimustuotos: LehtiartikkeliArticleScientificvertaisarvioitu

5 Sitaatiot (Scopus)

Abstrakti

Some transport properties of the magnetic semiconductor EuO have been measured at the ferromagnetic resonance (FMR). A static voltage appeared when the contacts on the sample were unsymmetrially located with respect to the external magnetic field. The induced static field was linearly proportional to the microwave power, the static electric field/microwave power ratio being 5×10−4 V/W mm. A change in sign of the static voltage was found when the angle between external magnetic field and microwave magnetic field was changed through 90 degree. To explain the appearance of the static voltage two models have been analyzed, electrodynamic interaction and magnon drag. The electrodynamic interaction model seems to fit better. A decrease in the sample resistivity at FMR was also observed, the change being 6 per cent.
AlkuperäiskieliEnglanti
Sivut1595-1597
JulkaisuJournal of Applied Physics
Vuosikerta49
Numero3
DOI - pysyväislinkit
TilaJulkaistu - 1978
OKM-julkaisutyyppiA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

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