Topographic Analysis of the Crystal Quality of Globally Available SiC Wafers

aapo Lankinen; I. Brazil; P.J. McNally; N. Ren; Lisa O´Reilly; A. Danilewsky; Turkka Tuomi; Antti Säynätjoki; R. Simon; S. Soloviev; L.B. Rowland; P.M. Sandvik

Topographic Analysis of the Crystal Quality of Globally Available SiC Wafers

aapo Lankinen, I. Brazil, P.J. McNally, N. Ren, Lisa O´Reilly, A. Danilewsky, Turkka Tuomi, Antti Säynätjoki, R. Simon, S. Soloviev, L.B. Rowland, P.M. Sandvik

Tutkimustuotos: Työpaperi › Working paper › Professional

Alkuperäiskieli	Englanti
Tila	Julkaistu - 2006
OKM-julkaisutyyppi	D4 Julkaistut kehitykset tai tutkimusraportit tai tutkimukset

Julkaisusarja

Nimi	The 6th European Conference on Silicon Carbide and Related Materials ECSCRM 2006, 3-7.9.2006, Newcastle-upon-Tyne, UK

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Koko teksti

Siteeraa tätä

Lankinen, A., Brazil, I., McNally, P. J., Ren, N., O´Reilly, L., Danilewsky, A., Tuomi, T., Säynätjoki, A., Simon, R., Soloviev, S., Rowland, L. B., & Sandvik, P. M. (2006). Topographic Analysis of the Crystal Quality of Globally Available SiC Wafers. (The 6th European Conference on Silicon Carbide and Related Materials ECSCRM 2006, 3-7.9.2006, Newcastle-upon-Tyne, UK).

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T1 - Topographic Analysis of the Crystal Quality of Globally Available SiC Wafers

AU - Lankinen, aapo

AU - Brazil, I.

AU - McNally, P.J.

AU - Ren, N.

AU - O´Reilly, Lisa

AU - Danilewsky, A.

AU - Tuomi, Turkka

AU - Säynätjoki, Antti

AU - Simon, R.

AU - Soloviev, S.

AU - Rowland, L.B.

AU - Sandvik, P.M.

PY - 2006

Y1 - 2006

M3 - Working paper

T3 - The 6th European Conference on Silicon Carbide and Related Materials ECSCRM 2006, 3-7.9.2006, Newcastle-upon-Tyne, UK

BT - Topographic Analysis of the Crystal Quality of Globally Available SiC Wafers

ER -