TiN films prepared by nitrogen implantation on Ti-coated fused SiO2

M. Erola*, J. Keinonen, A. Anttila, J. Koskinen

*Tämän työn vastaava kirjoittaja

Tutkimustuotos: LehtiartikkeliArticleScientificvertaisarvioitu

12 Sitaatiot (Scopus)

Abstrakti

Properties of TiN films prepared by 8-38 keV N2 + ion implantations on Ti-coated (90-650 Å) fused SiO2 have been studied for heat mirror coatings. TiN films prepared by annealing Ti film in a nitrogen atmosphere and by sputtering were used as reference samples. The thicknesses and nitrogen contents of the films were measured with the nuclear resonance broadening method and Rutherford backscattering spectrometry. The infrared reflectances of the TiN films prepared by nitrogen implantation were somewhat lower than that of the reference films. The implanted TiN films had as good visible light transmittances as the films prepared by annealing but better than the sputtered films. The advantages of the nitrogen implantation in the preparation of TiN films are excellent adhesion and low preparation temperature.

AlkuperäiskieliEnglanti
Sivut353-359
Sivumäärä7
JulkaisuSolar Energy Materials
Vuosikerta12
Numero5
DOI - pysyväislinkit
TilaJulkaistu - marraskuuta 1985
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

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