Thermal-Error Regime in High-Accuracy Gigahertz Single-Electron Pumping

R. Zhao, A. Rossi, S. P. Giblin, J. D. Fletcher, F. E. Hudson, M. Möttönen, M. Kataoka, A. S. Dzurak

Tutkimustuotos: LehtiartikkeliArticleScientificvertaisarvioitu

21 Sitaatiot (Scopus)
126 Lataukset (Pure)

Abstrakti

Single-electron pumps based on semiconductor quantum dots are promising candidates for the emerging quantum standard of electrical current. They can transfer discrete charges with part-per-million (ppm) precision in nanosecond time scales. Here, we employ a metal-oxide-semiconductor silicon quantum dot to experimentally demonstrate high-accuracy gigahertz single-electron pumping in the regime where the number of electrons trapped in the dot is determined by the thermal distribution in the reservoir leads. In a measurement with traceability to primary voltage and resistance standards, the averaged pump current over the quantized plateau, driven by a 1-GHz sinusoidal wave in the absence of a magnetic field, is equal to the ideal value of ef within a measurement uncertainty as low as 0.27 ppm.

AlkuperäiskieliEnglanti
Artikkeli044021
Sivut1-8
JulkaisuPhysical Review Applied
Vuosikerta8
Numero4
DOI - pysyväislinkit
TilaJulkaistu - 30 lokakuuta 2017
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

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  • Siteeraa tätä

    Zhao, R., Rossi, A., Giblin, S. P., Fletcher, J. D., Hudson, F. E., Möttönen, M., ... Dzurak, A. S. (2017). Thermal-Error Regime in High-Accuracy Gigahertz Single-Electron Pumping. Physical Review Applied, 8(4), 1-8. [044021]. https://doi.org/10.1103/PhysRevApplied.8.044021