The effect of temperature on the efficiency of nitride-based multi-quantum well light-emitting diodes

Oskari Heikkilä; Jani Oksanen; Jukka Tulkki

The effect of temperature on the efficiency of nitride-based multi-quantum well light-emitting diodes

Oskari Heikkilä^*, Jani Oksanen, Jukka Tulkki

^*Tämän työn vastaava kirjoittaja

Neurotieteen ja lääketieteellisen tekniikan laitos

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference article in proceedings › Scientific › vertaisarvioitu

1 Sitaatiot (Scopus)

Abstrakti

We have recently developed a self consistent light-emitting diode (LED) model that accounts for the current transport and internal heating in AlGaAs-GaAs LEDs. In this paper we extend the model to describe multi-quantum well (MQW) active regions and III-N materials, within the limits of the currently known values and temperature dependencies of the recombination parameters in these materials. The MQW description accounts for the effect of the reduced wave function overlap to the recombination. We present simulation results obtained for an InGaN MQW LED with 4 wells at selected temperatures and discuss the factors limiting the efficiency and luminescent output of LEDs.

Alkuperäiskieli	Englanti
Otsikko	Multiphysics Modeling in Materials Design
Sivut	37-42
Sivumäärä	6
Vuosikerta	1229
Tila	Julkaistu - 9 heinäk. 2010
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisussa
Tapahtuma	Materials Research Society Fall Meeting - Boston, Yhdysvallat Kesto: 30 marrask. 2009 → 4 jouluk. 2009

Conference

Conference	Materials Research Society Fall Meeting
Lyhennettä	MRS
Maa/Alue	Yhdysvallat
Kaupunki	Boston
Ajanjakso	30/11/2009 → 04/12/2009

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title = "The effect of temperature on the efficiency of nitride-based multi-quantum well light-emitting diodes",

abstract = "We have recently developed a self consistent light-emitting diode (LED) model that accounts for the current transport and internal heating in AlGaAs-GaAs LEDs. In this paper we extend the model to describe multi-quantum well (MQW) active regions and III-N materials, within the limits of the currently known values and temperature dependencies of the recombination parameters in these materials. The MQW description accounts for the effect of the reduced wave function overlap to the recombination. We present simulation results obtained for an InGaN MQW LED with 4 wells at selected temperatures and discuss the factors limiting the efficiency and luminescent output of LEDs.",

author = "Oskari Heikkil{\"a} and Jani Oksanen and Jukka Tulkki",

year = "2010",

month = jul,

day = "9",

language = "English",

isbn = "9781617384004",

volume = "1229",

pages = "37--42",

booktitle = "Multiphysics Modeling in Materials Design",

note = "Materials Research Society Fall Meeting, MRS ; Conference date: 30-11-2009 Through 04-12-2009",

}

TY - GEN

T1 - The effect of temperature on the efficiency of nitride-based multi-quantum well light-emitting diodes

AU - Heikkilä, Oskari

AU - Oksanen, Jani

AU - Tulkki, Jukka

PY - 2010/7/9

Y1 - 2010/7/9

N2 - We have recently developed a self consistent light-emitting diode (LED) model that accounts for the current transport and internal heating in AlGaAs-GaAs LEDs. In this paper we extend the model to describe multi-quantum well (MQW) active regions and III-N materials, within the limits of the currently known values and temperature dependencies of the recombination parameters in these materials. The MQW description accounts for the effect of the reduced wave function overlap to the recombination. We present simulation results obtained for an InGaN MQW LED with 4 wells at selected temperatures and discuss the factors limiting the efficiency and luminescent output of LEDs.

AB - We have recently developed a self consistent light-emitting diode (LED) model that accounts for the current transport and internal heating in AlGaAs-GaAs LEDs. In this paper we extend the model to describe multi-quantum well (MQW) active regions and III-N materials, within the limits of the currently known values and temperature dependencies of the recombination parameters in these materials. The MQW description accounts for the effect of the reduced wave function overlap to the recombination. We present simulation results obtained for an InGaN MQW LED with 4 wells at selected temperatures and discuss the factors limiting the efficiency and luminescent output of LEDs.

UR - http://www.scopus.com/inward/record.url?scp=77954296071&partnerID=8YFLogxK

M3 - Conference article in proceedings

AN - SCOPUS:77954296071

SN - 9781617384004

VL - 1229

SP - 37

EP - 42

BT - Multiphysics Modeling in Materials Design

T2 - Materials Research Society Fall Meeting

Y2 - 30 November 2009 through 4 December 2009

ER -

The effect of temperature on the efficiency of nitride-based multi-quantum well light-emitting diodes

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Conference

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