The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimization on GaN LED efficiency

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Tutkijat

Organisaatiot

  • RAS - Ioffe Physico Technical Institute
  • Optogan Oy

Kuvaus

We report on the effect of GaN buffer threading dislocation (TD) optimization and InGaN/GaN quantum well (QW) hydrogen (H2) treatment on the efficiency of GaN light emitting diodes (LEDs) operating in the spectral range from 400 to 500 nm. A tenfold reduction of the TD density in the GaN buffer increased the efficiency of blue LEDs operating at high current density, while in green LEDs it had very little effect. The reduced TD density also increased the compressive strain in the InGaN QWs, and caused blue shift to the electroluminescence (EL) peak wavelength. The H2 treatment of the QWs increased strain inside the MQW stack. It was possible to apply the H2 treatment only to UV LEDs, as the increased strain in blue and green LEDs caused relaxation of the MQW stack. Although this resulted in smooth surface morphology of the MQW stack, it did not lead to any increase in the efficiency of the UV LEDs.

Yksityiskohdat

AlkuperäiskieliEnglanti
Sivut740-743
Sivumäärä4
JulkaisuJournal of Crystal Growth
Vuosikerta298
TilaJulkaistu - tammikuuta 2007
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

ID: 4220165