The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimisation on GaN LED performance

Tutkimustuotos: Työpaperi › Working paper › Professional

Alkuperäiskieli	Englanti
Tila	Julkaistu - 2006
OKM-julkaisutyyppi	D4 Julkaistu kehittämis- tai tutkimusraportti taikka -selvitys

Nimi	IC MOVPE XIII, Miyazaki, Japani, 2006

Siteeraa tätä

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title = "The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimisation on GaN LED performance",

author = "Sami Suihkonen and Olli Svensk and Teemu Lang and Harri Lipsanen and M.A. Odnoblyudov and V.E. Bougrov",

year = "2006",

language = "English",

series = "IC MOVPE XIII, Miyazaki, Japani, 2006",

type = "WorkingPaper",

}

TY - UNPB

T1 - The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimisation on GaN LED performance

AU - Suihkonen, Sami

AU - Svensk, Olli

AU - Lang, Teemu

AU - Lipsanen, Harri

AU - Odnoblyudov, M.A.

AU - Bougrov, V.E.

PY - 2006

Y1 - 2006

M3 - Working paper

T3 - IC MOVPE XIII, Miyazaki, Japani, 2006

BT - The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimisation on GaN LED performance

ER -