Temperature-dependent Hall effect measurements on Cz-grown silicon pulled from compensated and recycled feedstock materials

Tutkimustuotos: Lehtiartikkelivertaisarvioitu



  • Norwegian University of Science and Technology


In this work, temperature-dependent Hall effect measurements in the temperature range 88-350 K were carried out to investigate the electrical properties of three solar grade p-type Czochralski (Cz) silicon ingots, pulled from recycled p-type multi-crystalline silicon top cuts and compensated solar grade (SoG) feedstock. Material bulk properties including Hall mobility, carrier density and resistivity as functions of temperature were studied to evaluate the influence of compensation and impurities. Recycled top cut replacing poly-silicon as feedstock leads to a more uniform resistivity. In addition, higher concentrations of O and C, give rise to oxygen related defects, which act as neutral scattering centers displaying only a slight influence on the electrical properties at low temperature compared to the dominant compensation effect. The electrical performances of all samples are shown to be strongly dependent on compensation level, especially at the lowest temperature (∼88 K). A significant presence of incompletely ionized phosphorus was deduced through the measured carrier density. The temperature-dependent Hall effect measurements fit Klaassen's mobility model very well at low temperatures (


JulkaisuJournal of Crystal Growth
TilaJulkaistu - 23 elokuuta 2015
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

ID: 3319124