Temperature dependency of responsivity and dark current of nearly ideal black silicon photodiodes

Juha Heinonen; Antti Haarahiltunen; Michael Serue; Daria Kriukova; Ville Vähänissi; Toni P. Pasanen; Hele Savin; Mikko A. Juntunen

doi:10.1117/12.2577128

Temperature dependency of responsivity and dark current of nearly ideal black silicon photodiodes

Juha Heinonen, Antti Haarahiltunen, Michael Serue, Daria Kriukova, Ville Vähänissi, Toni P. Pasanen, Hele Savin, Mikko A. Juntunen

ElFys Inc.

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference article in proceedings › Scientific › vertaisarvioitu

362 Lataukset (Pure)

Abstrakti

A high-quality photodiode has high signal-to-noise ratio (SNR), which is ultimately defined by the responsivity and dark current of the photodiode. Black silicon induced junction photodiodes have been shown to have nearly ideal responsivity across a wide range of wavelengths between 175-1100 nm at room temperature (RT). Here we present their spectral responsivity stability and dark current at different temperatures. Both quantities show temperature dependencies similar to conventional pn-junction photodiodes, proving that black silicon photodiodes maintain their improved SNR also at temperatures other than RT.

Alkuperäiskieli	Englanti
Otsikko	Optical Components and Materials XVIII
Kustantaja	SPIE
Sivumäärä	6
Vuosikerta	11682
ISBN (elektroninen)	978-1-5106-4200-3
DOI - pysyväislinkit	https://doi.org/10.1117/12.2577128
Tila	Julkaistu - 5 maalisk. 2021
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisussa
Tapahtuma	Optical Components and Materials - Virtual, Online Kesto: 6 maalisk. 2021 → 12 maalisk. 2021 Konferenssinumero: 18

Julkaisusarja

Nimi	SPIE Conference Proceedings
Kustantaja	SPIE
ISSN (painettu)	0277-786X

Conference

Conference	Optical Components and Materials
Kaupunki	Virtual, Online
Ajanjakso	06/03/2021 → 12/03/2021

Pääsy asiakirjaan

10.1117/12.2577128

Heinonen_2021_SPIE_Temperature dependency of responsivity and dark current of nearly ideal black silicon photodiodesFinal published version, 616 KB

PREIN: Fotoniikan Tutkimus ja Innovaatio
Mäkelä, K. (Vastuullinen tutkija)
01/01/2019 → 31/12/2022
Projekti: Academy of Finland: Other research funding

OtaNano
Rissanen, A. (Manager)
Aalto-yliopisto
Laitteistot/tilat: Facility
OtaNano Nanofab
Repo, P. (Manager) & Rissanen, A. (Other)
OtaNano
Laitteistot/tilat: Facility

Siteeraa tätä

@inproceedings{f58004d0aec246afb245e9248ca13f77,

title = "Temperature dependency of responsivity and dark current of nearly ideal black silicon photodiodes",

abstract = "A high-quality photodiode has high signal-to-noise ratio (SNR), which is ultimately defined by the responsivity and dark current of the photodiode. Black silicon induced junction photodiodes have been shown to have nearly ideal responsivity across a wide range of wavelengths between 175-1100 nm at room temperature (RT). Here we present their spectral responsivity stability and dark current at different temperatures. Both quantities show temperature dependencies similar to conventional pn-junction photodiodes, proving that black silicon photodiodes maintain their improved SNR also at temperatures other than RT.",

author = "Juha Heinonen and Antti Haarahiltunen and Michael Serue and Daria Kriukova and Ville V{\"a}h{\"a}nissi and Pasanen, {Toni P.} and Hele Savin and Juntunen, {Mikko A.}",

year = "2021",

month = mar,

day = "5",

doi = "10.1117/12.2577128",

language = "English",

volume = "11682",

series = "SPIE Conference Proceedings",

publisher = "SPIE",

booktitle = "Optical Components and Materials XVIII",

address = "United States",

note = "Optical Components and Materials ; Conference date: 06-03-2021 Through 12-03-2021",

}

Heinonen, J, Haarahiltunen, A, Serue, M, Kriukova, D, Vähänissi, V, Pasanen, TP, Savin, H & Juntunen, MA 2021, Temperature dependency of responsivity and dark current of nearly ideal black silicon photodiodes. julkaisussa Optical Components and Materials XVIII. Vuosikerta 11682, SPIE Conference Proceedings, SPIE, Optical Components and Materials, Virtual, Online, 06/03/2021. https://doi.org/10.1117/12.2577128

Temperature dependency of responsivity and dark current of nearly ideal black silicon photodiodes. / Heinonen, Juha; Haarahiltunen, Antti; Serue, Michael et al.
Optical Components and Materials XVIII. Vuosikerta 11682 SPIE, 2021. (SPIE Conference Proceedings).

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference article in proceedings › Scientific › vertaisarvioitu

TY - GEN

T1 - Temperature dependency of responsivity and dark current of nearly ideal black silicon photodiodes

AU - Heinonen, Juha

AU - Haarahiltunen, Antti

AU - Serue, Michael

AU - Kriukova, Daria

AU - Vähänissi, Ville

AU - Pasanen, Toni P.

AU - Savin, Hele

AU - Juntunen, Mikko A.

N1 - Conference code: 18

PY - 2021/3/5

Y1 - 2021/3/5

N2 - A high-quality photodiode has high signal-to-noise ratio (SNR), which is ultimately defined by the responsivity and dark current of the photodiode. Black silicon induced junction photodiodes have been shown to have nearly ideal responsivity across a wide range of wavelengths between 175-1100 nm at room temperature (RT). Here we present their spectral responsivity stability and dark current at different temperatures. Both quantities show temperature dependencies similar to conventional pn-junction photodiodes, proving that black silicon photodiodes maintain their improved SNR also at temperatures other than RT.

AB - A high-quality photodiode has high signal-to-noise ratio (SNR), which is ultimately defined by the responsivity and dark current of the photodiode. Black silicon induced junction photodiodes have been shown to have nearly ideal responsivity across a wide range of wavelengths between 175-1100 nm at room temperature (RT). Here we present their spectral responsivity stability and dark current at different temperatures. Both quantities show temperature dependencies similar to conventional pn-junction photodiodes, proving that black silicon photodiodes maintain their improved SNR also at temperatures other than RT.

U2 - 10.1117/12.2577128

DO - 10.1117/12.2577128

M3 - Conference article in proceedings

VL - 11682

T3 - SPIE Conference Proceedings

BT - Optical Components and Materials XVIII

PB - SPIE

T2 - Optical Components and Materials

Y2 - 6 March 2021 through 12 March 2021

ER -

Temperature dependency of responsivity and dark current of nearly ideal black silicon photodiodes

Abstrakti

Julkaisusarja

Conference

Pääsy asiakirjaan

Sormenjälki

Projektit

PREIN: Fotoniikan Tutkimus ja Innovaatio

Laitteet

OtaNano

OtaNano Nanofab

Siteeraa tätä