Temperature Dependence of Current-Voltage Characteristics of Au/Ga0.51In0.49P Schottky Barrier Diodes

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussavertaisarvioitu

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Current-Voltage (IV) measurements on Au / Ga0.51In0.49P Schottky barrier diodes in the temperature range 10 -320 K were done. The Ga0.51In0.49P layer was grown by Metal Organic Vapor Phase Epitaxy (MOVPE). The Cheung's method is used to estimate the value of a possible series resistance R-S and the ideality factor n. It is found that R-S is around 42 Omega at 10 K and decreases with temperature to around 7 Omega at 320 K. The IV curves were corrected for R-S. The ideality factor also decreases with increasing temperature, from 45.21 at 10 K to 1.99 at 320 K. It is well explained by the T-0 effect. The saturation current and the apparent barrier height were calculated by using the thermionic emission (TE) theory, as function of temperature. The zero-bias barrier height at 320 K was 0.554 eV. It is well explained by the Schottky model. From reverse-bias IV graphs, it is found that the experimental carrier density (rho) value increases with temperature.

Yksityiskohdat

AlkuperäiskieliEnglanti
OtsikkoPHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS
ToimittajatJ Ihm, H Cheong
TilaJulkaistu - 2011
OKM-julkaisutyyppiA4 Artikkeli konferenssijulkaisuussa
TapahtumaInternational Conference on the Physics of Semiconductors - Seoul, Etelä-Korea
Kesto: 25 heinäkuuta 201030 heinäkuuta 2010
Konferenssinumero: 30

Julkaisusarja

NimiAIP Conference Proceedings
KustantajaAMER INST PHYSICS
Vuosikerta1399
ISSN (painettu)0094-243X

Conference

ConferenceInternational Conference on the Physics of Semiconductors
LyhennettäICPS
MaaEtelä-Korea
KaupunkiSeoul
Ajanjakso25/07/201030/07/2010

ID: 6468191