Temperature dependence of current-voltage characteristics of Pt/InN Schottky barrier diodes

Victor-Tapio Rangel-Kuoppa, Sami Suihkonen, Markku Sopanen, Harri Lipsanen

    Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussaConference article in proceedingsScientificvertaisarvioitu

    9 Sitaatiot (Scopus)
    192 Lataukset (Pure)

    Abstrakti

    The Current-Voltage (IV) measurements on Pt/InN Schottky barrier diodes in the temperature range 10-280 K were done. It was found that the contact was Schottky up to 280 K, becoming irreversible ohmic for higher temperatures. The ideality factor, the saturation current and the apparent barrier height were calculated by using the thermionic emission (TE) theory. The ideality factor is temperature dependent, while the saturation current and the barrier height are not. The non conventional Richardson plot exhibits good linearity, corresponding to an activation energy of 2.08 eV and a Richardson constant of 18.7Am -2K-2. The Cheung's method to estimate the value of a possible series resistance RS yields a negligible resistance. From reverse-bias IV analysis, it is found that the experimental carrier density (ND) value increases with temperature. © 2009 American Institute of Physics.

    AlkuperäiskieliEnglanti
    OtsikkoPhysics of Semiconductors
    ToimittajatMJ Caldas, N Studart
    KustantajaAmerican Institute of Physics
    Sivut53-54
    Sivumäärä2
    ISBN (painettu)9780735407367
    DOI - pysyväislinkit
    TilaJulkaistu - 2009
    OKM-julkaisutyyppiA4 Artikkeli konferenssijulkaisussa
    TapahtumaInternational Conference on the Physics of Semiconductors - Rio de Janeiro, Brasilia
    Kesto: 27 heinäk. 20081 elok. 2008
    Konferenssinumero: 29

    Julkaisusarja

    NimiAIP Conference Proceedings
    KustantajaAIP
    Vuosikerta1199
    ISSN (painettu)0094-243X

    Conference

    ConferenceInternational Conference on the Physics of Semiconductors
    LyhennettäICPS
    Maa/AlueBrasilia
    KaupunkiRio de Janeiro
    Ajanjakso27/07/200801/08/2008

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