Temperature- and illumination-induced charge-state change in divacancies of GaTe

A. Zubiaga; F. Plazaola; J.A. Garcia; C. Martinez-Tomas; V. Muñoz-Sanjose

doi:10.1103/PhysRevB.81.195211

Temperature- and illumination-induced charge-state change in divacancies of GaTe

A. Zubiaga, F. Plazaola, J.A. Garcia, C. Martinez-Tomas, V. Muñoz-Sanjose

Tutkimustuotos: Lehtiartikkeli › Article › Scientific › vertaisarvioitu

1 Sitaatiot (Scopus)

Alkuperäiskieli	Englanti
Julkaisu	Physical Review B
Vuosikerta	81
DOI - pysyväislinkit	https://doi.org/10.1103/PhysRevB.81.195211
Tila	Julkaistu - 2010
OKM-julkaisutyyppi	A1 Julkaistu artikkeli, soviteltu

Tutkimusalat

GaTe, vacancy type defects, positron annihilation spectroscopy

Pääsy asiakirjaan

10.1103/PhysRevB.81.195211

SFX-saatavuus

Koko teksti

Siteeraa tätä

@article{9dba0227975847998a2c7496eb92ac1d,

title = "Temperature- and illumination-induced charge-state change in divacancies of GaTe",

keywords = "GaTe, vacancy type defects, positron annihilation spectroscopy, GaTe, vacancy type defects, positron annihilation spectroscopy, GaTe, vacancy type defects, positron annihilation spectroscopy",

author = "A. Zubiaga and F. Plazaola and J.A. Garcia and C. Martinez-Tomas and V. Mu{\~n}oz-Sanjose",

year = "2010",

doi = "10.1103/PhysRevB.81.195211",

language = "English",

volume = "81",

journal = "Physical Review B (Condensed Matter and Materials Physics)",

issn = "2469-9950",

publisher = "American Physical Society",

}

TY - JOUR

T1 - Temperature- and illumination-induced charge-state change in divacancies of GaTe

AU - Zubiaga, A.

AU - Plazaola, F.

AU - Garcia, J.A.

AU - Martinez-Tomas, C.

AU - Muñoz-Sanjose, V.

PY - 2010

Y1 - 2010

KW - GaTe, vacancy type defects, positron annihilation spectroscopy

U2 - 10.1103/PhysRevB.81.195211

DO - 10.1103/PhysRevB.81.195211

M3 - Article

VL - 81

JO - Physical Review B (Condensed Matter and Materials Physics)

JF - Physical Review B (Condensed Matter and Materials Physics)

SN - 2469-9950

ER -