TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern

Tutkimustuotos: Lehtiartikkeli

Standard

TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern. / Mynbaeva, M. G.; Kremleva, A. V.; Kirilenko, D. A.; Sitnikova, A. A.; Pechnikov, A. I.; Mynbaev, K. D.; Nikolaev, V. I.; Bougrov, V. E.; Lipsanen, H.; Romanov, A. E.

julkaisussa: Journal of Crystal Growth, Vuosikerta 445, 01.07.2016, s. 30-36.

Tutkimustuotos: Lehtiartikkeli

Harvard

Mynbaeva, MG, Kremleva, AV, Kirilenko, DA, Sitnikova, AA, Pechnikov, AI, Mynbaev, KD, Nikolaev, VI, Bougrov, VE, Lipsanen, H & Romanov, AE 2016, 'TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern', Journal of Crystal Growth, Vuosikerta. 445, Sivut 30-36. https://doi.org/10.1016/j.jcrysgro.2016.04.011

APA

Mynbaeva, M. G., Kremleva, A. V., Kirilenko, D. A., Sitnikova, A. A., Pechnikov, A. I., Mynbaev, K. D., ... Romanov, A. E. (2016). TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern. Journal of Crystal Growth, 445, 30-36. https://doi.org/10.1016/j.jcrysgro.2016.04.011

Vancouver

Author

Mynbaeva, M. G. ; Kremleva, A. V. ; Kirilenko, D. A. ; Sitnikova, A. A. ; Pechnikov, A. I. ; Mynbaev, K. D. ; Nikolaev, V. I. ; Bougrov, V. E. ; Lipsanen, H. ; Romanov, A. E. / TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern. Julkaisussa: Journal of Crystal Growth. 2016 ; Vuosikerta 445. Sivut 30-36.

Bibtex - Lataa

@article{64de475882994b50b735cedce66261a3,
title = "TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern",
abstract = "A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107 cm-2, was achieved.",
keywords = "Defects, Hydride vapor phase epitaxy, Metalorganic chemical vapor deposition, Semiconducting III-V materials",
author = "Mynbaeva, {M. G.} and Kremleva, {A. V.} and Kirilenko, {D. A.} and Sitnikova, {A. A.} and Pechnikov, {A. I.} and Mynbaev, {K. D.} and Nikolaev, {V. I.} and Bougrov, {V. E.} and H. Lipsanen and Romanov, {A. E.}",
year = "2016",
month = "7",
day = "1",
doi = "10.1016/j.jcrysgro.2016.04.011",
language = "English",
volume = "445",
pages = "30--36",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

RIS - Lataa

TY - JOUR

T1 - TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern

AU - Mynbaeva, M. G.

AU - Kremleva, A. V.

AU - Kirilenko, D. A.

AU - Sitnikova, A. A.

AU - Pechnikov, A. I.

AU - Mynbaev, K. D.

AU - Nikolaev, V. I.

AU - Bougrov, V. E.

AU - Lipsanen, H.

AU - Romanov, A. E.

PY - 2016/7/1

Y1 - 2016/7/1

N2 - A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107 cm-2, was achieved.

AB - A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107 cm-2, was achieved.

KW - Defects

KW - Hydride vapor phase epitaxy

KW - Metalorganic chemical vapor deposition

KW - Semiconducting III-V materials

UR - http://www.scopus.com/inward/record.url?scp=84963631910&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2016.04.011

DO - 10.1016/j.jcrysgro.2016.04.011

M3 - Article

VL - 445

SP - 30

EP - 36

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -

ID: 3301941