TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Tutkijat

  • M. G. Mynbaeva
  • A. V. Kremleva
  • D. A. Kirilenko
  • A. A. Sitnikova
  • A. I. Pechnikov
  • K. D. Mynbaev
  • V. I. Nikolaev
  • V. E. Bougrov
  • Harri Lipsanen

  • A. E. Romanov

Organisaatiot

  • Ioffe Institute
  • Perfect Crystals LLC
  • St. Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO)

Kuvaus

A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107 cm-2, was achieved.

Yksityiskohdat

AlkuperäiskieliEnglanti
Sivut30-36
Sivumäärä7
JulkaisuJournal of Crystal Growth
Vuosikerta445
TilaJulkaistu - 1 heinäkuuta 2016
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

ID: 3301941