Tailoring phonon modes of few-layered MoS2 by in-plane electric field

Sreemanta Mitra*, Divya Srivastava, Shib Shankar Singha, Saurav Dutta, Biswarup Satpati, Maarit Karppinen, Arindam Ghosh, Achintya Singha

*Tämän työn vastaava kirjoittaja

Tutkimustuotos: LehtiartikkeliArticleScientificvertaisarvioitu

6 Lataukset (Pure)

Abstrakti

We discuss the effect of the in-plane electric field on the Raman spectroscopy for few-layered MoS2. The characteristic Raman modes of MoS2 show gradual red shift, while the intensity increases by 45–50% as the electric field is increased, showing a large electro-optical effect. Structural analysis suggests that our few-layered MoS2 belongs to P6/m2 space group with broken inversion symmetry. We attribute this gradual red shift to this broken symmetry-driven piezoelectricity in MoS2, which generates tensile strain along the perpendicular direction when the electric field is applied. The enhancement of the effect upon reversing the electric field direction adds credence to our interpretation. Our first principal density-functional theory calculation further substantiates the claim. This optical probing of the electromechanical coupling may lead to applications as a nonextensive technique for electric field/strain sensors in the nanoelectronics devices.

AlkuperäiskieliEnglanti
Artikkeli6
Julkaisunpj 2D Materials and Applications
Vuosikerta4
Numero1
DOI - pysyväislinkit
TilaJulkaistu - 30 huhtikuuta 2020
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

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