Synthesis of Extended Atomically Perfect Zigzag Graphene - Boron Nitride Interfaces

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

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The combination of several materials into heterostructures is a powerful method for controlling material properties. The integration of graphene (G) with hexagonal boron nitride (BN) in particular has been heralded as a way to engineer the graphene band structure and implement spin- and valleytronics in 2D materials. Despite recent efforts, fabrication methods for well-defined G-BN structures on a large scale are still lacking. We report on a new method for producing atomically well-defined G-BN structures on an unprecedented length scale by exploiting the interaction of G and BN edges with a Ni(111) surface as well as each other.

Yksityiskohdat

AlkuperäiskieliEnglanti
Artikkeli16741
Sivut1-8
JulkaisuScientific Reports
Vuosikerta5
TilaJulkaistu - 2015
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

    Tutkimusalat

  • graphene, hexagonal boron nitride, scanning tunneling microscopy, Two-dimensional materials

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ID: 2010134