Synchrotron X-ray topographic study of Si wafers and device structures for advanced 0.25 u m and 0.35 u m CMOS technology

P McNally; A. Reader; T. Tuomi; P. Herbert

Synchrotron X-ray topographic study of Si wafers and device structures for advanced 0.25 u m and 0.35 u m CMOS technology

P McNally, A. Reader, T. Tuomi, P. Herbert

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference contribution › Scientific › vertaisarvioitu

Alkuperäiskieli	Englanti
Otsikko	EU SHAPE (Sub-Half micron Process for European users) 2nd Process Characterisation Workshop, Centre National d'Etudes des Telecommunications, Grenoble, France, 10-11 January 1996
Julkaisupaikka	Grenoble, France
Tila	Julkaistu - 1996
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisuussa

Tutkimusalat

optoelectronics
semiconductors

OpenUrl-saatavuus

Koko teksti

Siteeraa tätä

McNally, P., Reader, A., Tuomi, T., & Herbert, P. (1996). Synchrotron X-ray topographic study of Si wafers and device structures for advanced 0.25 u m and 0.35 u m CMOS technology. teoksessa EU SHAPE (Sub-Half micron Process for European users) 2nd Process Characterisation Workshop, Centre National d'Etudes des Telecommunications, Grenoble, France, 10-11 January 1996

McNally, P ; Reader, A. ; Tuomi, T. et al. / Synchrotron X-ray topographic study of Si wafers and device structures for advanced 0.25 u m and 0.35 u m CMOS technology. EU SHAPE (Sub-Half micron Process for European users) 2nd Process Characterisation Workshop, Centre National d'Etudes des Telecommunications, Grenoble, France, 10-11 January 1996. Grenoble, France, 1996.

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title = "Synchrotron X-ray topographic study of Si wafers and device structures for advanced 0.25 u m and 0.35 u m CMOS technology",

keywords = "optoelectronics, semiconductors, optoelectronics, semiconductors, optoelectronics, semiconductors",

author = "P McNally and A. Reader and T. Tuomi and P. Herbert",

year = "1996",

language = "English",

booktitle = "EU SHAPE (Sub-Half micron Process for European users) 2nd Process Characterisation Workshop, Centre National d'Etudes des Telecommunications, Grenoble, France, 10-11 January 1996",

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McNally, P, Reader, A, Tuomi, T & Herbert, P 1996, Synchrotron X-ray topographic study of Si wafers and device structures for advanced 0.25 u m and 0.35 u m CMOS technology. julkaisussa EU SHAPE (Sub-Half micron Process for European users) 2nd Process Characterisation Workshop, Centre National d'Etudes des Telecommunications, Grenoble, France, 10-11 January 1996. Grenoble, France.

Synchrotron X-ray topographic study of Si wafers and device structures for advanced 0.25 u m and 0.35 u m CMOS technology. / McNally, P; Reader, A.; Tuomi, T. et al.

EU SHAPE (Sub-Half micron Process for European users) 2nd Process Characterisation Workshop, Centre National d'Etudes des Telecommunications, Grenoble, France, 10-11 January 1996. Grenoble, France, 1996.

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference contribution › Scientific › vertaisarvioitu

TY - GEN

T1 - Synchrotron X-ray topographic study of Si wafers and device structures for advanced 0.25 u m and 0.35 u m CMOS technology

AU - McNally, P

AU - Reader, A.

AU - Tuomi, T.

AU - Herbert, P.

PY - 1996

Y1 - 1996

KW - optoelectronics

KW - semiconductors

KW - optoelectronics

KW - semiconductors

KW - optoelectronics

KW - semiconductors

M3 - Conference contribution

BT - EU SHAPE (Sub-Half micron Process for European users) 2nd Process Characterisation Workshop, Centre National d'Etudes des Telecommunications, Grenoble, France, 10-11 January 1996

CY - Grenoble, France

ER -

McNally P, Reader A, Tuomi T, Herbert P. Synchrotron X-ray topographic study of Si wafers and device structures for advanced 0.25 u m and 0.35 u m CMOS technology. julkaisussa EU SHAPE (Sub-Half micron Process for European users) 2nd Process Characterisation Workshop, Centre National d'Etudes des Telecommunications, Grenoble, France, 10-11 January 1996. Grenoble, France. 1996