@article{b652d5b3b26a45a0b704a45be779b9c4,
title = "Synchrotron x-ray topographic and high-resolution diffration analysis of mask-induced strain in epitaxial laterally overgrown GaAs layers",
keywords = "diffraction, epitasial, gallium arsenide, overgrown, strain, synchrotron, x-ray topography, diffraction, epitasial, gallium arsenide, overgrown, strain, synchrotron, x-ray topography, diffraction, epitasial, gallium arsenide, overgrown, strain, synchrotron, x-ray topography",
author = "R. Rantam{\"a}ki and T. Tuomi and Z.R. Zytkiewicz and J. Domagala and P.J. McNally and A.N. Danilewsky",
year = "1999",
language = "English",
volume = "86",
pages = "4298--4303",
journal = "Journal of Applied Physics",
issn = "1089-7550",
publisher = "American Institute of Physics",
}