Synchrotron topography for defect characterization in III-V semiconductors.

T. Tuomi; A. Danilewsky; P. McNally; M. Taskinen; M. Schweitzer

Synchrotron topography for defect characterization in III-V semiconductors.

T. Tuomi
, A. Danilewsky
, P. McNally
, M. Taskinen
, M. Schweitzer

Tutkimustuotos: Työpaperi › Working paper › Professional

Alkuperäiskieli	Englanti
Julkaisupaikka	Karlsruhe, Germany
Sivut	s.
Tila	Julkaistu - 1995
OKM-julkaisutyyppi	D4 Julkaistu kehittämis- tai tutkimusraportti taikka -selvitys

Tutkimusalat

semiconductors, synchrotron X-ray topography

Siteeraa tätä

@techreport{e72babc8516742b28754a43974e48188,

title = "Synchrotron topography for defect characterization in III-V semiconductors.",

keywords = "semiconductors, synchrotron X-ray topography, semiconductors, synchrotron X-ray topography, semiconductors, synchrotron X-ray topography",

author = "T. Tuomi and A. Danilewsky and P. McNally and M. Taskinen and M. Schweitzer",

year = "1995",

language = "English",

pages = "s.",

type = "WorkingPaper",

}

TY - UNPB

T1 - Synchrotron topography for defect characterization in III-V semiconductors.

AU - Tuomi, T.

AU - Danilewsky, A.

AU - McNally, P.

AU - Taskinen, M.

AU - Schweitzer, M.

PY - 1995

Y1 - 1995

KW - semiconductors, synchrotron X-ray topography

M3 - Working paper

SP - s.

BT - Synchrotron topography for defect characterization in III-V semiconductors.

CY - Karlsruhe, Germany

ER -