Surface passivation of GaAs nanowires by the atomic layer deposition of AlN

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Standard

Surface passivation of GaAs nanowires by the atomic layer deposition of AlN. / Shtrom, I. V.; Bouravleuv, A. D.; Samsonenko, Yu B.; Khrebtov, A. I.; Soshnikov, I. P.; Reznik, R. R.; Cirlin, G. E.; Dhaka, V.; Perros, A.; Lipsanen, H.

julkaisussa: Semiconductors, Vuosikerta 50, Nro 12, 12.2016, s. 1619-1621.

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Harvard

Shtrom, IV, Bouravleuv, AD, Samsonenko, YB, Khrebtov, AI, Soshnikov, IP, Reznik, RR, Cirlin, GE, Dhaka, V, Perros, A & Lipsanen, H 2016, 'Surface passivation of GaAs nanowires by the atomic layer deposition of AlN', Semiconductors, Vuosikerta. 50, Nro 12, Sivut 1619-1621. https://doi.org/10.1134/S1063782616120186

APA

Shtrom, I. V., Bouravleuv, A. D., Samsonenko, Y. B., Khrebtov, A. I., Soshnikov, I. P., Reznik, R. R., ... Lipsanen, H. (2016). Surface passivation of GaAs nanowires by the atomic layer deposition of AlN. Semiconductors, 50(12), 1619-1621. https://doi.org/10.1134/S1063782616120186

Vancouver

Shtrom IV, Bouravleuv AD, Samsonenko YB, Khrebtov AI, Soshnikov IP, Reznik RR et al. Surface passivation of GaAs nanowires by the atomic layer deposition of AlN. Semiconductors. 2016 joulu;50(12):1619-1621. https://doi.org/10.1134/S1063782616120186

Author

Shtrom, I. V. ; Bouravleuv, A. D. ; Samsonenko, Yu B. ; Khrebtov, A. I. ; Soshnikov, I. P. ; Reznik, R. R. ; Cirlin, G. E. ; Dhaka, V. ; Perros, A. ; Lipsanen, H. / Surface passivation of GaAs nanowires by the atomic layer deposition of AlN. Julkaisussa: Semiconductors. 2016 ; Vuosikerta 50, Nro 12. Sivut 1619-1621.

Bibtex - Lataa

@article{0bafdf8f3c104cdca02fd25d266f1863,
title = "Surface passivation of GaAs nanowires by the atomic layer deposition of AlN",
abstract = "It is shown that the atomic layer deposition of thin AlN layers can be used to passivate the surface states of GaAs nanowires synthesized by molecular-beam epitaxy. Studies of the optical properties of samples by low-temperature photoluminescence measurements shows that the photoluminescence-signal intensity can be increased by a factor of up to five by passivating the nanowires with a 25--thick AlN layer.",
keywords = "PHOTOLUMINESCENCE",
author = "Shtrom, {I. V.} and Bouravleuv, {A. D.} and Samsonenko, {Yu B.} and Khrebtov, {A. I.} and Soshnikov, {I. P.} and Reznik, {R. R.} and Cirlin, {G. E.} and V. Dhaka and A. Perros and H. Lipsanen",
year = "2016",
month = "12",
doi = "10.1134/S1063782616120186",
language = "English",
volume = "50",
pages = "1619--1621",
journal = "Semiconductors",
issn = "1063-7826",
number = "12",

}

RIS - Lataa

TY - JOUR

T1 - Surface passivation of GaAs nanowires by the atomic layer deposition of AlN

AU - Shtrom, I. V.

AU - Bouravleuv, A. D.

AU - Samsonenko, Yu B.

AU - Khrebtov, A. I.

AU - Soshnikov, I. P.

AU - Reznik, R. R.

AU - Cirlin, G. E.

AU - Dhaka, V.

AU - Perros, A.

AU - Lipsanen, H.

PY - 2016/12

Y1 - 2016/12

N2 - It is shown that the atomic layer deposition of thin AlN layers can be used to passivate the surface states of GaAs nanowires synthesized by molecular-beam epitaxy. Studies of the optical properties of samples by low-temperature photoluminescence measurements shows that the photoluminescence-signal intensity can be increased by a factor of up to five by passivating the nanowires with a 25--thick AlN layer.

AB - It is shown that the atomic layer deposition of thin AlN layers can be used to passivate the surface states of GaAs nanowires synthesized by molecular-beam epitaxy. Studies of the optical properties of samples by low-temperature photoluminescence measurements shows that the photoluminescence-signal intensity can be increased by a factor of up to five by passivating the nanowires with a 25--thick AlN layer.

KW - PHOTOLUMINESCENCE

U2 - 10.1134/S1063782616120186

DO - 10.1134/S1063782616120186

M3 - Article

VL - 50

SP - 1619

EP - 1621

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 12

ER -

ID: 11072986