Surface-controlled growth of LaAlO3 thin films by atomic layer epitaxy

M Nieminen*, T Sajavaara, E Rauhala, M Putkonen, Lauri Niinistö

*Tämän työn vastaava kirjoittaja

    Tutkimustuotos: LehtiartikkeliArticleScientificvertaisarvioitu

    Abstrakti

    LaAlO3 thin films were deposited by atomic layer epitaxy (ALE) from beta -diketonate-type precursors La(thd)(3) and Al(acac)(3). Ozone was used as an oxygen source. Films were grown on soda lime glass, Si(100), MgO-buffered Si(100), sapphire and SrTiO3(100) Substrates. The influence of the La:Al precursor pulsing ratio on the film growth and quality in the temperature range of 325-400 degreesC was studied in detail. Stoichiometry and impurity levels were measured using RBS, TOF-ERDA and XPS while the chemical type of carbon impurity was identified by FTIR. XRD and AFM were used to determine crystallinity and surface morphology. The films were transparent and uniform and their thickness could be accurately controlled by the number of deposition cycles. The as-deposited films were amorphous but became crystalline upon annealing at 900 degreesC. The annealed films grown on Si(100) and MgO(111)-buffered Si(100) substrates had a preferred (110) orientation whereas those grown on MgO(100)-buffered Si(100) substrates showed a preferred (100) orientation. Epitaxial and smooth LaAlO3 thin films were obtained on SrTiO3(100) after annealing at 900 degreesC, verified by measurement of the X-ray rocking curve of the (200) reflection and the AFM surface roughness. Stoichiometric LaAlO3 films contained

    AlkuperäiskieliEnglanti
    Sivut2340-2345
    Sivumäärä6
    JulkaisuJournal of Materials Chemistry
    Vuosikerta11
    Numero9
    DOI - pysyväislinkit
    TilaJulkaistu - 2001
    OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

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