Abstrakti
A study of the application of atomic layer deposition (ALD) technique in relation to surface chemistry of trimethylaluminum/water process, is presented. The study also provides an insight to the of surface chemistry of atomic layer deposition (ALD) technique. The study also discusses the mechanism of two-reactant ALD process and includes descriptions about the physicochemical requirements of self-terminating reactions, reaction kinetics, typical chemisorption reactions, and effect of temperature on number of cycles on growth per cycles (GPC). The issues hampering a physicochemical process are also discussed. The results of the study were compared to the growth experiments on flat substrates and reaction chemistry of high-surface-area materials.
Alkuperäiskieli | Englanti |
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Artikkeli | 121301 |
Sivut | 1-52 |
Julkaisu | Journal of Applied Physics |
Vuosikerta | 97 |
Numero | 12 |
DOI - pysyväislinkit | |
Tila | Julkaistu - 2005 |
OKM-julkaisutyyppi | A2 Katsausartikkeli tieteellisessä aikakauslehdessä |