Subsurface damage in polishing-annealing processed ZnO substrates

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Tutkijat

  • V. Prozheeva
  • K. M. Johansen
  • P. T. Neuvonen
  • A. Zubiaga
  • L. Vines
  • A. Yu Kuznetzov
  • F. Tuomisto

Organisaatiot

  • University of Oslo
  • Swiss Federal Institute of Technology Zurich

Kuvaus

Positron annihilation spectroscopy and secondary ion mass spectrometry have been applied to study the evolution of polishing-induced defects in hydrothermally grown ZnO samples depending on the annealing temperature. Annealing of the as-grown ZnO wafer at 1200-1500. °C is found to lead to Li accumulation in the sub-surface layer, and significant reduction of Li content in the bulk. Polishing is shown to introduce vacancy complexes involving both VZn and VO. Post-polishing annealing of hydrothermally grown ZnO with removed Li layer at 800°C reduces the concentration of polishing-induced defects below the detection limit.

Yksityiskohdat

AlkuperäiskieliEnglanti
Sivut19-22
JulkaisuMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Vuosikerta69
TilaJulkaistu - lokakuuta 2017
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

ID: 11125736