Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors

C. Medina-Bailon; T. Sadi; M. Nedjalkov; J. Lee; S. Berrada; H. Carrillo-Nunez; V. Georgiev; S. Selberherr; A. Asenov

doi:10.1109/ULIS.2018.8354723

Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors

C. Medina-Bailon
, T. Sadi
, M. Nedjalkov
, J. Lee
, S. Berrada
, H. Carrillo-Nunez
, V. Georgiev
, S. Selberherr
, A. Asenov

Neurotieteen ja lääketieteellisen tekniikan laitos

University of Glasgow
Institute of Telecommunications

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference article in proceedings › Scientific › vertaisarvioitu

8 Sitaatiot (Scopus)

176 Lataukset (Pure)

Abstrakti

The extensive research of aggressively scaled nano-electronic devices necessitates the inclusion of quantum confinement effects and their impact on performance. This work implements a set of multisubband phonon and impurity scattering mechanisms within the Kubo-Greenwood formalism in order to study their impact on the mobility in Si nanowire transistors (NWTs). This 1D treatment has been coupled with a 3D Poisson-2D Schrödinger solver, which accurately captures the effects of quantum confinement on charge dynamics. We also emphasize the importance of using the 1D models to evaluate the geometrical properties on mobility at the scaling limit.

Alkuperäiskieli	Englanti
Otsikko	2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018
Kustantaja	IEEE
Sivut	1-4
Sivumäärä	4
Vuosikerta	2018-January
ISBN (elektroninen)	9781538648117
DOI - pysyväislinkit	https://doi.org/10.1109/ULIS.2018.8354723
Tila	Julkaistu - 3 toukok. 2018
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisussa
Tapahtuma	Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon - Granada, Espanja Kesto: 19 maalisk. 2018 → 21 maalisk. 2018

Conference

Conference	Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon
Lyhennettä	EUROSOI-ULIS
Maa/Alue	Espanja
Kaupunki	Granada
Ajanjakso	19/03/2018 → 21/03/2018

Pääsy asiakirjaan

10.1109/ULIS.2018.8354723

SCI_Medina_Bailon_Study_EUROSOI_ULIS_2018_CMedinaBailonAccepted author manuscript, 1,68 MB

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Link to publication in Scopus

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Medina-Bailon, C., Sadi, T., Nedjalkov, M., Lee, J., Berrada, S., Carrillo-Nunez, H., Georgiev, V., Selberherr, S., & Asenov, A. (2018). Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors. teoksessa 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018 (Vuosikerta 2018-January, Sivut 1-4). IEEE. https://doi.org/10.1109/ULIS.2018.8354723

@inproceedings{8c55301c376d4f5788958615389fb27c,

title = "Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors",

abstract = "The extensive research of aggressively scaled nano-electronic devices necessitates the inclusion of quantum confinement effects and their impact on performance. This work implements a set of multisubband phonon and impurity scattering mechanisms within the Kubo-Greenwood formalism in order to study their impact on the mobility in Si nanowire transistors (NWTs). This 1D treatment has been coupled with a 3D Poisson-2D Schr{\"o}dinger solver, which accurately captures the effects of quantum confinement on charge dynamics. We also emphasize the importance of using the 1D models to evaluate the geometrical properties on mobility at the scaling limit.",

keywords = "Impurity Scattering, Kubo-Greenwood Formalism, Matthiessen rule, Nanowire FETs, Phonon Scattering",

author = "C. Medina-Bailon and T. Sadi and M. Nedjalkov and J. Lee and S. Berrada and H. Carrillo-Nunez and V. Georgiev and S. Selberherr and A. Asenov",

year = "2018",

month = may,

day = "3",

doi = "10.1109/ULIS.2018.8354723",

language = "English",

volume = "2018-January",

pages = "1--4",

booktitle = "2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018",

publisher = "IEEE",

address = "United States",

note = "Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS ; Conference date: 19-03-2018 Through 21-03-2018",

}

Medina-Bailon, C, Sadi, T, Nedjalkov, M, Lee, J, Berrada, S, Carrillo-Nunez, H, Georgiev, V, Selberherr, S & Asenov, A 2018, Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors. julkaisussa 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018. Vuosikerta 2018-January, IEEE, Sivut 1-4, Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Granada, Espanja, 19/03/2018. https://doi.org/10.1109/ULIS.2018.8354723

Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors. / Medina-Bailon, C.; Sadi, T.; Nedjalkov, M. et al.
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018. Vuosikerta 2018-January IEEE, 2018. s. 1-4.

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference article in proceedings › Scientific › vertaisarvioitu

TY - GEN

T1 - Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors

AU - Medina-Bailon, C.

AU - Sadi, T.

AU - Nedjalkov, M.

AU - Lee, J.

AU - Berrada, S.

AU - Carrillo-Nunez, H.

AU - Georgiev, V.

AU - Selberherr, S.

AU - Asenov, A.

PY - 2018/5/3

Y1 - 2018/5/3

N2 - The extensive research of aggressively scaled nano-electronic devices necessitates the inclusion of quantum confinement effects and their impact on performance. This work implements a set of multisubband phonon and impurity scattering mechanisms within the Kubo-Greenwood formalism in order to study their impact on the mobility in Si nanowire transistors (NWTs). This 1D treatment has been coupled with a 3D Poisson-2D Schrödinger solver, which accurately captures the effects of quantum confinement on charge dynamics. We also emphasize the importance of using the 1D models to evaluate the geometrical properties on mobility at the scaling limit.

AB - The extensive research of aggressively scaled nano-electronic devices necessitates the inclusion of quantum confinement effects and their impact on performance. This work implements a set of multisubband phonon and impurity scattering mechanisms within the Kubo-Greenwood formalism in order to study their impact on the mobility in Si nanowire transistors (NWTs). This 1D treatment has been coupled with a 3D Poisson-2D Schrödinger solver, which accurately captures the effects of quantum confinement on charge dynamics. We also emphasize the importance of using the 1D models to evaluate the geometrical properties on mobility at the scaling limit.

KW - Impurity Scattering

KW - Kubo-Greenwood Formalism

KW - Matthiessen rule

KW - Nanowire FETs

KW - Phonon Scattering

UR - https://www.scopus.com/pages/publications/85050942677

U2 - 10.1109/ULIS.2018.8354723

DO - 10.1109/ULIS.2018.8354723

M3 - Conference article in proceedings

AN - SCOPUS:85050942677

VL - 2018-January

SP - 1

EP - 4

BT - 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018

PB - IEEE

T2 - Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon

Y2 - 19 March 2018 through 21 March 2018

ER -

Medina-Bailon C, Sadi T, Nedjalkov M, Lee J, Berrada S, Carrillo-Nunez H et al. Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors. julkaisussa 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018. Vuosikerta 2018-January. IEEE. 2018. s. 1-4 doi: 10.1109/ULIS.2018.8354723

Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors

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