Study of properties and development of sensors based on graphene films grown on SiC (0001) by thermal destruction method

A. A. Lebedev, V. Y. Davydov, D. Y. Usachov, S. P. Lebedev, A. N. Smirnov, V. S. Levitskii, I. A. Eliseyev, P. A. Alekseev, M. S. Dunaevskiy, A. G. Rybkin, S. N. Novikov, Yu N. Makarov

Tutkimustuotos: LehtiartikkeliConference articleScientificvertaisarvioitu

2 Sitaatiot (Scopus)
140 Lataukset (Pure)

Abstrakti

The structural, chemical, and electronic properties of epitaxial graphene films grown by thermal decomposition of the Si-face of a semi-insulating 6H-SiC substrate in an argon environment are studied by Raman spectroscopy, X-ray photoelectron spectroscopy and angle-resolved photoemission. It was demonstrated the possibility of fabrication of the gas and biosensors that is based on grown graphene films. The gas sensors are sufficiently sensitive to NO2 at low concentrations. The biosensor operation was checked using an immunochemical system comprising fluorescein dye and monoclonal anti fluorescein antibodies. The sensor detects fluorescein concentration on a level of 1-10 ng/mL and bovine serum albumin- fluorescein conjugate on a level of 1-5 ng/mL. The proposed device has good prospects for use for early diagnostics of various diseases.

AlkuperäiskieliEnglanti
Artikkeli012007
JulkaisuJournal of Physics: Conference Series
Vuosikerta951
Numero1
DOI - pysyväislinkit
TilaJulkaistu - 30 tammikuuta 2018
OKM-julkaisutyyppiA4 Artikkeli konferenssijulkaisuussa
TapahtumaInternational Conference Modern Nanotechnologies and Nanophotonics for Science and Industry - Suzdal, Venäjä
Kesto: 9 marraskuuta 201713 marraskuuta 2017
Konferenssinumero: 6

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