Structural study of GaP layers on misoriented silicon (001) substrates by transverse scan analysis

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This paper examines the structural properties of gallium phosphide layers by high resolution x-ray diffraction and atomic force microscopy measurements. GaP layers are grown on misoriented and nominally exactly oriented silicon (001) substrates by metalorganic vapor phase epitaxy. Structural characterization is performed by reciprocal lattice map and transverse scan measurements of (00l)-reflections (l = 2, 4, 6). Transverse scan line profiles of GaP layers on exactly oriented and misoriented substrates are compared thoroughly and antiphase disorder related satellite peaks are observed on exactly oriented substrates. In addition, results imply that antiphase disorder is self-annihilated on misoriented substrates. The dependence of crystallographic tilt on growth temperature indicates structural coherence. Williamson-Hall-like plot of transverse scans reveals the lateral correlation length of crystalline defects of 79 nm which gives the average size of the mosaic crystallites. In addition, the mosaicity of the GaP layer is 0.042°.

Yksityiskohdat

AlkuperäiskieliEnglanti
Artikkeli043518
Sivut1-6
Sivumäärä6
JulkaisuJournal of Applied Physics
Vuosikerta111
Numero4
TilaJulkaistu - 2012
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

ID: 920884