Structural, morphological, optical and electrical characterization of InGaN/GaN MQW structures for optoelectronic applications

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Tutkijat

  • K. Prabakaran
  • M. Jayasakthi
  • S. Surender
  • S. Pradeep
  • S. Sanjay
  • Ramesh Raju

  • M. Balaji
  • Nicolas Gautier
  • K. Baskar

Organisaatiot

  • Anna University
  • University of Madras
  • Universite de Nantes
  • Manonmaniam Sundaranar University

Kuvaus

InGaN/GaN multiple quantum well (MQW) structures were grown on c-plane sapphire substrate using metal organic chemical vapour deposition technique by varying the MQW periods. The indium composition and thickness were estimated using high-resolution X-ray diffraction. InGaN well, GaN barriers and Indium composition were estimated as 3 nm, 18 nm and 16–18% using epitaxy smooth fit software. Reciprocal space mapping revealed that InGaN/GaN MQW samples were coherently strained. High-resolution transmission electron microscopy images confirmed good interface between the InGaN/GaN MQW structures. Atomic force microscopy and scanning electron microscopy exhibit decrease in the surface roughness with increase in the number of InGaN/GaN MQW periods with respect to the number of defects comprising of threading dislocations and hexagonal V-pits. Self-organized In(Ga)N like nanostructures with spiral growth mechanism was also observed due to the low temperature growth of p-GaN layer. The photoluminescence spectra of the MQWs showed a red-shift when the number of QW periods was increased due to quantum confined stark effect. Hall Effect measurement displayed good semiconducting behavior in the InGaN/GaN MQW structures. The carrier concentration values also emphasized adequate variations when number of periods was increased.

Yksityiskohdat

AlkuperäiskieliEnglanti
Sivut993-999
Sivumäärä7
JulkaisuApplied Surface Science
Vuosikerta476
TilaJulkaistu - 15 toukokuuta 2019
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

ID: 31555450