Structural and magnetic properties of Co-doped ZnO films grown by pulse-injection MOCVD

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Tutkijat

Organisaatiot

  • Vilnius University
  • Trinity College Dublin

Kuvaus

We report on pulse-injection metal organic chemical vapor deposition (PI-MOCVD) and characterization of Zn1 - x Cox O films on (1 1 0 2) sapphire substrates. The use of Zn(tmhd)2 and Co(tmhd)3 precursors produces high-quality films in which Co2 + ions replace Zn2+ without disrupting the ZnO lattice. The Zn1 - x Cox O films are magnetic at room temperature for x ≤ 0.10 and the magnetic moments are particularly large for small Co doping concentrations (18.9 μB / Co for x = 0.01 and 6.5 μB / Co for x = 0.02). These large moments and the decrease of the saturation moment with increasing Co content cannot be explained by the formation of Co clusters. We instead believe that the magnetic behavior of the PI-MOCVD grown samples is an intrinsic property of the Zn1 - x Cox O films.

Yksityiskohdat

AlkuperäiskieliEnglanti
Sivute203–e206
Sivumäärä4
JulkaisuJournal of Magnetism and Magnetic Materials
Vuosikerta316
Numero2
TilaJulkaistu - syyskuuta 2007
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

ID: 5407855