Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films

Tutkimustuotos: Lehtiartikkeli

Standard

Harvard

APA

Vancouver

Author

Bibtex - Lataa

@article{17af85b5dc254b348e0f9f70a894a7dd,
title = "Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films",
abstract = "Plasma-enhanced atomic layer deposition was utilized to grow aluminum nitride (AlN) films on Si from trimethylaluminum and N2:H2 plasma at 200 °C. Thermal treatments were then applied on the films which caused changes in their chemical composition and nanostructure. These changes were observed to manifest in the refractive indices and densities of the films. The AlN films were identified to contain light element impurities, namely, H, C, and excess N due to nonideal precursor reactions. Oxygen contamination was also identified in the films. Many of the embedded impurities became volatile in the elevated annealing temperatures. Most notably, high amounts of H were observed to desorb from the AlN films. Furthermore, dinitrogen triple bonds were identified with infrared spectroscopy in the films. The triple bonds broke after annealing at 1000 °C for 1 h which likely caused enhanced hydrolysis of the films. The nanostructure of the films was identified to be amorphous in the as-deposited state and to become nanocrystalline after 1 h of annealing at 1000 °C.",
author = "Mikael Broas and Perttu Sippola and Timo Sajavaara and Vesa Vuorinen and {Pyymaki Perros}, Alexander and Harri Lipsanen and Mervi Paulasto-Kr{\"o}ckel",
year = "2016",
month = "7",
day = "1",
doi = "10.1116/1.4953029",
language = "English",
volume = "34",
pages = "1--10",
journal = "JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A",
issn = "0734-2101",
publisher = "AVS Science and Technology Society",
number = "4",

}

RIS - Lataa

TY - JOUR

T1 - Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films

AU - Broas, Mikael

AU - Sippola, Perttu

AU - Sajavaara, Timo

AU - Vuorinen, Vesa

AU - Pyymaki Perros, Alexander

AU - Lipsanen, Harri

AU - Paulasto-Kröckel, Mervi

PY - 2016/7/1

Y1 - 2016/7/1

N2 - Plasma-enhanced atomic layer deposition was utilized to grow aluminum nitride (AlN) films on Si from trimethylaluminum and N2:H2 plasma at 200 °C. Thermal treatments were then applied on the films which caused changes in their chemical composition and nanostructure. These changes were observed to manifest in the refractive indices and densities of the films. The AlN films were identified to contain light element impurities, namely, H, C, and excess N due to nonideal precursor reactions. Oxygen contamination was also identified in the films. Many of the embedded impurities became volatile in the elevated annealing temperatures. Most notably, high amounts of H were observed to desorb from the AlN films. Furthermore, dinitrogen triple bonds were identified with infrared spectroscopy in the films. The triple bonds broke after annealing at 1000 °C for 1 h which likely caused enhanced hydrolysis of the films. The nanostructure of the films was identified to be amorphous in the as-deposited state and to become nanocrystalline after 1 h of annealing at 1000 °C.

AB - Plasma-enhanced atomic layer deposition was utilized to grow aluminum nitride (AlN) films on Si from trimethylaluminum and N2:H2 plasma at 200 °C. Thermal treatments were then applied on the films which caused changes in their chemical composition and nanostructure. These changes were observed to manifest in the refractive indices and densities of the films. The AlN films were identified to contain light element impurities, namely, H, C, and excess N due to nonideal precursor reactions. Oxygen contamination was also identified in the films. Many of the embedded impurities became volatile in the elevated annealing temperatures. Most notably, high amounts of H were observed to desorb from the AlN films. Furthermore, dinitrogen triple bonds were identified with infrared spectroscopy in the films. The triple bonds broke after annealing at 1000 °C for 1 h which likely caused enhanced hydrolysis of the films. The nanostructure of the films was identified to be amorphous in the as-deposited state and to become nanocrystalline after 1 h of annealing at 1000 °C.

UR - http://www.scopus.com/inward/record.url?scp=84974566715&partnerID=8YFLogxK

U2 - 10.1116/1.4953029

DO - 10.1116/1.4953029

M3 - Article

VL - 34

SP - 1

EP - 10

JO - JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A

JF - JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A

SN - 0734-2101

IS - 4

M1 - 041506

ER -

ID: 6470608