Strong surface passivation of GaAs nanowires with ultrathin InP and GaP capping layers

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Strong surface passivation of GaAs nanowires with ultrathin InP and GaP capping layers. / Haggren, T.; Jiang, H.; Kakko, J.-P.; Huhtio, T.; Dhaka, V.; Kauppinen, E.; Lipsanen, H.

julkaisussa: Applied Physics Letters, Vuosikerta 105, Nro 3, 033114, 2014, s. 1-5.

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

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Bibtex - Lataa

@article{0c60031aa85248788289122a864f3bce,
title = "Strong surface passivation of GaAs nanowires with ultrathin InP and GaP capping layers",
abstract = "We demonstrate efficient surface passivation of GaAs nanowires using ultrathin in-situ grown epitaxial InP and GaP capping layers, with metallo-organic vapor phase epitaxy as the growth system. The passivation increased photoluminescence intensity by three orders of magnitude compared to unpassivated nanowires, and the effect remained strong after a month of storage in air. Effective passivation was acquired over a wide range of growth temperatures, although the highest studied temperatures caused additional detrimental effects such as etching and GaAsP formation. The capping layer thickness was in the order of few monolayers. Therefore, the impact on any other properties of the nanowires besides the surface states was minuscule. As a simple and effective method the studied capping layers offer an excellent way for nanowire passivation.",
keywords = "III-V semiconductors, nanowires, passivation, photoluminescence, thin film growth, III-V semiconductors, nanowires, passivation, photoluminescence, thin film growth, III-V semiconductors, nanowires, passivation, photoluminescence, thin film growth",
author = "T. Haggren and H. Jiang and J.-P. Kakko and T. Huhtio and V. Dhaka and E. Kauppinen and H. Lipsanen",
year = "2014",
doi = "10.1063/1.4891535",
language = "English",
volume = "105",
pages = "1--5",
journal = "Applied Physics Letters",
issn = "0003-6951",
number = "3",

}

RIS - Lataa

TY - JOUR

T1 - Strong surface passivation of GaAs nanowires with ultrathin InP and GaP capping layers

AU - Haggren, T.

AU - Jiang, H.

AU - Kakko, J.-P.

AU - Huhtio, T.

AU - Dhaka, V.

AU - Kauppinen, E.

AU - Lipsanen, H.

PY - 2014

Y1 - 2014

N2 - We demonstrate efficient surface passivation of GaAs nanowires using ultrathin in-situ grown epitaxial InP and GaP capping layers, with metallo-organic vapor phase epitaxy as the growth system. The passivation increased photoluminescence intensity by three orders of magnitude compared to unpassivated nanowires, and the effect remained strong after a month of storage in air. Effective passivation was acquired over a wide range of growth temperatures, although the highest studied temperatures caused additional detrimental effects such as etching and GaAsP formation. The capping layer thickness was in the order of few monolayers. Therefore, the impact on any other properties of the nanowires besides the surface states was minuscule. As a simple and effective method the studied capping layers offer an excellent way for nanowire passivation.

AB - We demonstrate efficient surface passivation of GaAs nanowires using ultrathin in-situ grown epitaxial InP and GaP capping layers, with metallo-organic vapor phase epitaxy as the growth system. The passivation increased photoluminescence intensity by three orders of magnitude compared to unpassivated nanowires, and the effect remained strong after a month of storage in air. Effective passivation was acquired over a wide range of growth temperatures, although the highest studied temperatures caused additional detrimental effects such as etching and GaAsP formation. The capping layer thickness was in the order of few monolayers. Therefore, the impact on any other properties of the nanowires besides the surface states was minuscule. As a simple and effective method the studied capping layers offer an excellent way for nanowire passivation.

KW - III-V semiconductors

KW - nanowires

KW - passivation

KW - photoluminescence

KW - thin film growth

KW - III-V semiconductors

KW - nanowires

KW - passivation

KW - photoluminescence

KW - thin film growth

KW - III-V semiconductors

KW - nanowires

KW - passivation

KW - photoluminescence

KW - thin film growth

UR - http://scitation.aip.org/content/aip/journal/apl/105/3/10.1063/1.4891535

U2 - 10.1063/1.4891535

DO - 10.1063/1.4891535

M3 - Article

VL - 105

SP - 1

EP - 5

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 3

M1 - 033114

ER -

ID: 829371