Stress distribution of GaN layer grown on micro-pillar patterned GaN templates

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Tutkijat

Organisaatiot

  • University of Strathclyde

Kuvaus

High-resolution Raman mapping of the stress distribution in an etched GaN micro-pillar template and a 5 μm thick GaN layer grown on a micro-pillar patterned GaN template is investigated. Raman mapping of the E2 (high) phonon shows differences in stress between the coalescing boundary, the top surface of the pillar region and around the GaN micro-pillar. Increased compressive stress is observed at the coalescing boundary of two adjacent GaN micro-pillars, when compared to the laterally grown GaN regions. The electron channeling contrast image reveals the reduction of threading dislocation density in the GaN layer grown on the micro-pillar patterned GaN template.

Yksityiskohdat

AlkuperäiskieliEnglanti
Artikkeli012102
Sivut1-4
Sivumäärä4
JulkaisuApplied Physics Letters
Vuosikerta103
Numero1
TilaJulkaistu - 2013
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

    Tutkimusalat

  • dislocations, electron channeling, GaN, Raman mapping, stress

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