Stability and residual stresses of sputtered wurtzite AlScN thin films

Elmeri Österlund; Glenn Ross; Miguel A. Caro; Mervi Paulasto-Kröckel; Andreas Hollmann; Manuela Klaus; Matthias Meixner; Christoph Genzel; Panu Koppinen; Tuomas Pensala; Agnė Žukauskaitė; Michal Trebala

doi:10.1103/PhysRevMaterials.5.035001

Stability and residual stresses of sputtered wurtzite AlScN thin films

Elmeri Österlund^*
, Glenn Ross
, Miguel A. Caro
, Mervi Paulasto-Kröckel
, Andreas Hollmann
, Manuela Klaus
, Matthias Meixner
, Christoph Genzel
, Panu Koppinen
, Tuomas Pensala
, Agnė Žukauskaitė
, Michal Trebala

^*Tämän työn vastaava kirjoittaja

Helmholtz Centre Berlin for Materials and Energy
VTT Technical Research Centre of Finland Ltd.
Fraunhofer Institute for Applied Solid State Physics

Tutkimustuotos: Lehtiartikkeli › Article › Scientific › vertaisarvioitu

43 Sitaatiot (Scopus)

349 Lataukset (Pure)

Abstrakti

Scandium-alloying of aluminum nitride (AlScN) enhances the piezoelectric properties of the material and increases the performance of piezoelectric microelectromechanical systems (MEMS). However, this enhancement is caused by the destabilization of the wurtzite phase and so far the stability of AlScN thin films has not been sufficiently studied. Stability is especially important for piezoelectric devices because changes to the film microstructure or residual stress can lead to drastic changes in the device behavior. The stability of AlScN is investigated by annealing sputtered films and characterizing the resulting changes. It is found that the wurtzite phase of Al_0.7Sc_0.3N is stable at least up to 1000^∘C and annealing increases the crystal quality, reaching a maximum at 800^∘C. When annealed for more than 100 h at 1000^∘C, argon used in sputtering segregates into the grain boundaries and causes compressive strains and formation of rock-salt phase. Additionally, annealing at 1000^∘C for 5 h reduces the average tensile stress by approximately 1 GPa.

Alkuperäiskieli	Englanti
Artikkeli	035001
Sivumäärä	14
Julkaisu	Physical Review Materials
Vuosikerta	5
Numero	3
DOI - pysyväislinkit	https://doi.org/10.1103/PhysRevMaterials.5.035001
Tila	Julkaistu - 2 maalisk. 2021
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Rahoitus

E. Österlund appreciates the funding from the European Space Agency (NPI Grant No. 4000116390) and Aalto ELEC Doctoral School. Dr. Žukauskaitė appreciates the funding from FhG Internal Programs under Grant No. Attract 005-600636. Dr. Vesa Vuorinen and Dr. Hongqun Dong are acknowledged for useful discussions. This research was conducted as a part of the EU project POSITION II (Ecsel-783132-Position-II-2017-IA) and performed partly at the Aalto University OtaNano–Micronova Nanofabrication Centre and Nanomicroscopy Center.

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10.1103/PhysRevMaterials.5.035001Lisenssi: CC BY

ELEC_Österlund_etal_Stability_and_residual_Phys_Rev_Materials_2021_finalpublishedversionFinal published version, 4,34 MBLisenssi: CC BY

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1 Päättynyt

POSITION-II: A pilot line for the next generation of smart catheters and implants
Paulasto-Kröckel, M. (Vastuullinen johtaja), Bespalova, K. (Projektin jäsen), Kaaos, J. (Projektin jäsen), Dong, H. (Projektin jäsen), Vuorinen, V. (Projektin jäsen) & Österlund, E. (Projektin jäsen)
01/06/2018 → 31/05/2021
Projekti: Business Finland: Other research funding

OtaNano
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Repo, P. (Manager) & Rissanen, A. (Other)
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title = "Stability and residual stresses of sputtered wurtzite AlScN thin films",

abstract = "Scandium-alloying of aluminum nitride (AlScN) enhances the piezoelectric properties of the material and increases the performance of piezoelectric microelectromechanical systems (MEMS). However, this enhancement is caused by the destabilization of the wurtzite phase and so far the stability of AlScN thin films has not been sufficiently studied. Stability is especially important for piezoelectric devices because changes to the film microstructure or residual stress can lead to drastic changes in the device behavior. The stability of AlScN is investigated by annealing sputtered films and characterizing the resulting changes. It is found that the wurtzite phase of Al0.7Sc0.3N is stable at least up to 1000∘C and annealing increases the crystal quality, reaching a maximum at 800∘C. When annealed for more than 100 h at 1000∘C, argon used in sputtering segregates into the grain boundaries and causes compressive strains and formation of rock-salt phase. Additionally, annealing at 1000∘C for 5 h reduces the average tensile stress by approximately 1 GPa.",

author = "Elmeri {\"O}sterlund and Glenn Ross and Caro, \{Miguel A.\} and Mervi Paulasto-Kr{\"o}ckel and Andreas Hollmann and Manuela Klaus and Matthias Meixner and Christoph Genzel and Panu Koppinen and Tuomas Pensala and Agnė {\v Z}ukauskaitė and Michal Trebala",

note = "Funding Information: E. {\"O}sterlund appreciates the funding from the European Space Agency (NPI Grant No. 4000116390) and Aalto ELEC Doctoral School. Dr. {\v Z}ukauskaitė appreciates the funding from FhG Internal Programs under Grant No. Attract 005-600636. Dr. Vesa Vuorinen and Dr. Hongqun Dong are acknowledged for useful discussions. This research was conducted as a part of the EU project POSITION II (Ecsel-783132-Position-II-2017-IA) and performed partly at the Aalto University OtaNano–Micronova Nanofabrication Centre and Nanomicroscopy Center. Publisher Copyright: {\textcopyright} 2021 authors. Published by the American Physical Society. Copyright: Copyright 2021 Elsevier B.V., All rights reserved. | openaire: EC/H2020/783132/EU//POSITION-II",

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month = mar,

day = "2",

doi = "10.1103/PhysRevMaterials.5.035001",

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T1 - Stability and residual stresses of sputtered wurtzite AlScN thin films

AU - Österlund, Elmeri

AU - Ross, Glenn

AU - Caro, Miguel A.

AU - Paulasto-Kröckel, Mervi

AU - Hollmann, Andreas

AU - Klaus, Manuela

AU - Meixner, Matthias

AU - Genzel, Christoph

AU - Koppinen, Panu

AU - Pensala, Tuomas

AU - Žukauskaitė, Agnė

AU - Trebala, Michal

N1 - Funding Information: E. Österlund appreciates the funding from the European Space Agency (NPI Grant No. 4000116390) and Aalto ELEC Doctoral School. Dr. Žukauskaitė appreciates the funding from FhG Internal Programs under Grant No. Attract 005-600636. Dr. Vesa Vuorinen and Dr. Hongqun Dong are acknowledged for useful discussions. This research was conducted as a part of the EU project POSITION II (Ecsel-783132-Position-II-2017-IA) and performed partly at the Aalto University OtaNano–Micronova Nanofabrication Centre and Nanomicroscopy Center. Publisher Copyright: © 2021 authors. Published by the American Physical Society. Copyright: Copyright 2021 Elsevier B.V., All rights reserved. | openaire: EC/H2020/783132/EU//POSITION-II

PY - 2021/3/2

Y1 - 2021/3/2

N2 - Scandium-alloying of aluminum nitride (AlScN) enhances the piezoelectric properties of the material and increases the performance of piezoelectric microelectromechanical systems (MEMS). However, this enhancement is caused by the destabilization of the wurtzite phase and so far the stability of AlScN thin films has not been sufficiently studied. Stability is especially important for piezoelectric devices because changes to the film microstructure or residual stress can lead to drastic changes in the device behavior. The stability of AlScN is investigated by annealing sputtered films and characterizing the resulting changes. It is found that the wurtzite phase of Al0.7Sc0.3N is stable at least up to 1000∘C and annealing increases the crystal quality, reaching a maximum at 800∘C. When annealed for more than 100 h at 1000∘C, argon used in sputtering segregates into the grain boundaries and causes compressive strains and formation of rock-salt phase. Additionally, annealing at 1000∘C for 5 h reduces the average tensile stress by approximately 1 GPa.

AB - Scandium-alloying of aluminum nitride (AlScN) enhances the piezoelectric properties of the material and increases the performance of piezoelectric microelectromechanical systems (MEMS). However, this enhancement is caused by the destabilization of the wurtzite phase and so far the stability of AlScN thin films has not been sufficiently studied. Stability is especially important for piezoelectric devices because changes to the film microstructure or residual stress can lead to drastic changes in the device behavior. The stability of AlScN is investigated by annealing sputtered films and characterizing the resulting changes. It is found that the wurtzite phase of Al0.7Sc0.3N is stable at least up to 1000∘C and annealing increases the crystal quality, reaching a maximum at 800∘C. When annealed for more than 100 h at 1000∘C, argon used in sputtering segregates into the grain boundaries and causes compressive strains and formation of rock-salt phase. Additionally, annealing at 1000∘C for 5 h reduces the average tensile stress by approximately 1 GPa.

UR - https://www.scopus.com/pages/publications/85104267135

U2 - 10.1103/PhysRevMaterials.5.035001

DO - 10.1103/PhysRevMaterials.5.035001

M3 - Article

AN - SCOPUS:85104267135

SN - 2476-0455

VL - 5

JO - Physical Review Materials

JF - Physical Review Materials

IS - 3

M1 - 035001

ER -

Stability and residual stresses of sputtered wurtzite AlScN thin films

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