Abstrakti
We have simulated using molecular dynamics the thermal stability and crystallization kinetics of nanometre-sized clusters of amorphous Si embedded in crystalline Si, which are of interest for phase-change memory devices. We have calculated the interfacial and bulk excess energies of the amorphous clusters, and studied their crystallization kinetics at 700-1500 K. At temperatures below (above) 1150 K the activation energy is 0.73 ± 0.04 eV (1.52 ± 0.07 eV), indicating a change of mechanism at 1150 K. We predict the stability of much larger amorphous clusters by extrapolating our simulation data using an analytic model.
Alkuperäiskieli | Englanti |
---|---|
Sivut | 4263-4270 |
Sivumäärä | 8 |
Julkaisu | Journal of physics: Condensed matter |
Vuosikerta | 17 |
Numero | 27 |
DOI - pysyväislinkit | |
Tila | Julkaistu - 13 heinäk. 2005 |
OKM-julkaisutyyppi | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä |