Spin dependent electron transport through a magnetic resonant tunneling diode

P. Havu, N. Tuomisto, R. Väänänen, M.J. Puska, R.M. Nieminen

Tutkimustuotos: LehtiartikkeliArticleScientificvertaisarvioitu

17 Sitaatiot (Scopus)
134 Lataukset (Pure)

Abstrakti

Electron-transport properties in nanostructures can be modeled, for example, by using the semiclassical Wigner formalism or the quantum-mechanical Green’s function formalism. We compare the performance and the results of these methods in the case of magnetic resonant-tunneling diodes. We have implemented the two methods within the self-consistent spin-density-functional theory. Our numerical implementation of the Wigner formalism is based on the finite-difference scheme whereas for the Green’s function formalism the finite-element method is used. As a specific application, we consider the device studied by Slobodskyy et al. [Phys. Rev. Lett. 90, 246601 (2003)] and analyze their experimental results. The Wigner and Green’s function formalisms give similar electron densities and potentials but, surprisingly, the former method requires much more computer resources in order to obtain numerically accurate results for currents. Both of the formalisms can be used to model magnetic resonant tunneling diode structures.
AlkuperäiskieliEnglanti
Artikkeli235301
Sivut1-11
Sivumäärä11
JulkaisuPhysical Review B
Vuosikerta71
Numero23
DOI - pysyväislinkit
TilaJulkaistu - 2 kesäk. 2005
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

Tutkimusalat

  • resonance tunneling diode
  • transport

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