Spatially resolved characterization of InGaAs/GaAs quantum dot structures by scanning spreading resistance microscopy

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6 Sitaatiot (Scopus)

Alkuperäiskieli	Englanti
Sivut	041106
Julkaisu	Applied Physics Letters
Vuosikerta	97
Numero	4
DOI - pysyväislinkit	https://doi.org/10.1063/1.3467138
Tila	Julkaistu - 2010
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Pääsy asiakirjaan

@article{7bfa1b37f86745a780a0b015a16302e3,

title = "Spatially resolved characterization of InGaAs/GaAs quantum dot structures by scanning spreading resistance microscopy",

author = "T. Hakkarainen and O. Douheret and Srinivasan Anand and L. Fu and H.H. Tan and C. Jagadish",

year = "2010",

doi = "10.1063/1.3467138",

language = "English",

volume = "97",

pages = "041106",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Spatially resolved characterization of InGaAs/GaAs quantum dot structures by scanning spreading resistance microscopy

AU - Hakkarainen, T.

AU - Douheret, O.

AU - Anand, Srinivasan

AU - Fu, L.

AU - Tan, H.H.

AU - Jagadish, C.

PY - 2010

Y1 - 2010

UR - http://dx.doi.org/10.1063/1.3467138

U2 - 10.1063/1.3467138

DO - 10.1063/1.3467138

M3 - Article

SN - 0003-6951

VL - 97

SP - 041106

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -