Spatial uniformity of black silicon induced junction photodiode responsivity

Juha Heinonen; Antti Haarahiltunen; Ville Vähänissi; Toni P. Pasanen; Hele Savin; Juha Toivanen; Mikko A. Juntunen

doi:10.1117/12.2649636

Spatial uniformity of black silicon induced junction photodiode responsivity

Juha Heinonen, Antti Haarahiltunen, Ville Vähänissi, Toni P. Pasanen, Hele Savin, Juha Toivanen, Mikko A. Juntunen

ElFys Inc.

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference article in proceedings › Scientific › vertaisarvioitu

32 Lataukset (Pure)

Abstrakti

Black silicon induced junction photodiodes have nearly ideal responsivity across a wide range of wavelengths between 175-1100 nm, with external quantum efficiency over 99 % at visible wavelengths, when a single spot is measured using light beam between 1 to 2mm in diameter. The spatial uniformity of responsivity is also an important characteristic of a high-quality photodiode, when considering its usage as a reference in photometry. We study here the spatial uniformity of responsivity of large area (8mmx8mm) black silicon photodiodes at 405 nm wavelength. Our results show that the spatial non-uniformity is less than 0.5 % over 90 % of the surface area, and thus the photodiodes meet the thigh criteria typically set for reference standards and are hence suitable for such application.

Alkuperäiskieli	Englanti
Otsikko	Optical Components and Materials XX
Toimittajat	Shibin Jiang, Michel J. Digonnet
Kustantaja	SPIE
Sivumäärä	7
ISBN (elektroninen)	978-1-5106-5940-7
ISBN (painettu)	978-1-5106-5939-1
DOI - pysyväislinkit	https://doi.org/10.1117/12.2649636
Tila	Julkaistu - 14 maalisk. 2023
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisussa
Tapahtuma	Optical Components and Materials - San Francisco, Yhdysvallat Kesto: 28 tammik. 2023 → 3 helmik. 2023 Konferenssinumero: 20

Julkaisusarja

Nimi	Proceedings of SPIE : the International Society for Optical Engineering
Kustantaja	SPIE
ISSN (painettu)	0277-786X
ISSN (elektroninen)	1996-756X

Conference

Conference	Optical Components and Materials
Maa/Alue	Yhdysvallat
Kaupunki	San Francisco
Ajanjakso	28/01/2023 → 03/02/2023

Pääsy asiakirjaan

10.1117/12.2649636

1241713Final published version, 2,86 MB

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PREIN: Fotoniikan Tutkimus ja Innovaatio
Mäkelä, K. (Vastuullinen tutkija)
01/01/2019 → 31/12/2022
Projekti: Academy of Finland: Other research funding

OtaNano
Rissanen, A. (Manager)
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Repo, P. (Manager) & Rissanen, A. (Other)
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Heinonen, J., Haarahiltunen, A., Vähänissi, V., Pasanen, T. P., Savin, H., Toivanen, J., & Juntunen, M. A. (2023). Spatial uniformity of black silicon induced junction photodiode responsivity. teoksessa S. Jiang, & M. J. Digonnet (Toimittajat), Optical Components and Materials XX Artikkeli 1241713 (Proceedings of SPIE : the International Society for Optical Engineering). SPIE. https://doi.org/10.1117/12.2649636

@inproceedings{a5136b4e54c44b819f1fced26ecada75,

title = "Spatial uniformity of black silicon induced junction photodiode responsivity",

abstract = "Black silicon induced junction photodiodes have nearly ideal responsivity across a wide range of wavelengths between 175-1100 nm, with external quantum efficiency over 99 % at visible wavelengths, when a single spot is measured using light beam between 1 to 2mm in diameter. The spatial uniformity of responsivity is also an important characteristic of a high-quality photodiode, when considering its usage as a reference in photometry. We study here the spatial uniformity of responsivity of large area (8mmx8mm) black silicon photodiodes at 405 nm wavelength. Our results show that the spatial non-uniformity is less than 0.5 % over 90 % of the surface area, and thus the photodiodes meet the thigh criteria typically set for reference standards and are hence suitable for such application.",

keywords = "Black silicon, spatial uniformity, silicon, photodiode",

author = "Juha Heinonen and Antti Haarahiltunen and Ville V{\"a}h{\"a}nissi and Pasanen, {Toni P.} and Hele Savin and Juha Toivanen and Juntunen, {Mikko A.}",

year = "2023",

month = mar,

day = "14",

doi = "10.1117/12.2649636",

language = "English",

isbn = "978-1-5106-5939-1",

series = "Proceedings of SPIE : the International Society for Optical Engineering",

publisher = "SPIE",

editor = "Shibin Jiang and Digonnet, {Michel J.}",

booktitle = "Optical Components and Materials XX",

address = "United States",

note = "Optical Components and Materials ; Conference date: 28-01-2023 Through 03-02-2023",

}

Heinonen, J, Haarahiltunen, A, Vähänissi, V, Pasanen, TP, Savin, H, Toivanen, J & Juntunen, MA 2023, Spatial uniformity of black silicon induced junction photodiode responsivity. julkaisussa S Jiang & MJ Digonnet (toim), Optical Components and Materials XX., 1241713, Proceedings of SPIE : the International Society for Optical Engineering, SPIE, Optical Components and Materials, San Francisco, California, Yhdysvallat, 28/01/2023. https://doi.org/10.1117/12.2649636

Spatial uniformity of black silicon induced junction photodiode responsivity. / Heinonen, Juha; Haarahiltunen, Antti; Vähänissi, Ville et al.
Optical Components and Materials XX. toim. / Shibin Jiang; Michel J. Digonnet. SPIE, 2023. 1241713 (Proceedings of SPIE : the International Society for Optical Engineering).

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference article in proceedings › Scientific › vertaisarvioitu

TY - GEN

T1 - Spatial uniformity of black silicon induced junction photodiode responsivity

AU - Heinonen, Juha

AU - Haarahiltunen, Antti

AU - Vähänissi, Ville

AU - Pasanen, Toni P.

AU - Savin, Hele

AU - Toivanen, Juha

AU - Juntunen, Mikko A.

N1 - Conference code: 20

PY - 2023/3/14

Y1 - 2023/3/14

N2 - Black silicon induced junction photodiodes have nearly ideal responsivity across a wide range of wavelengths between 175-1100 nm, with external quantum efficiency over 99 % at visible wavelengths, when a single spot is measured using light beam between 1 to 2mm in diameter. The spatial uniformity of responsivity is also an important characteristic of a high-quality photodiode, when considering its usage as a reference in photometry. We study here the spatial uniformity of responsivity of large area (8mmx8mm) black silicon photodiodes at 405 nm wavelength. Our results show that the spatial non-uniformity is less than 0.5 % over 90 % of the surface area, and thus the photodiodes meet the thigh criteria typically set for reference standards and are hence suitable for such application.

AB - Black silicon induced junction photodiodes have nearly ideal responsivity across a wide range of wavelengths between 175-1100 nm, with external quantum efficiency over 99 % at visible wavelengths, when a single spot is measured using light beam between 1 to 2mm in diameter. The spatial uniformity of responsivity is also an important characteristic of a high-quality photodiode, when considering its usage as a reference in photometry. We study here the spatial uniformity of responsivity of large area (8mmx8mm) black silicon photodiodes at 405 nm wavelength. Our results show that the spatial non-uniformity is less than 0.5 % over 90 % of the surface area, and thus the photodiodes meet the thigh criteria typically set for reference standards and are hence suitable for such application.

KW - Black silicon

KW - spatial uniformity

KW - silicon

KW - photodiode

UR - http://www.scopus.com/inward/record.url?scp=85159772540&partnerID=8YFLogxK

U2 - 10.1117/12.2649636

DO - 10.1117/12.2649636

M3 - Conference article in proceedings

SN - 978-1-5106-5939-1

T3 - Proceedings of SPIE : the International Society for Optical Engineering

BT - Optical Components and Materials XX

A2 - Jiang, Shibin

A2 - Digonnet, Michel J.

PB - SPIE

T2 - Optical Components and Materials

Y2 - 28 January 2023 through 3 February 2023

ER -

Spatial uniformity of black silicon induced junction photodiode responsivity

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Julkaisusarja

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