Single-electron transistor made of multiwalled carbon nanotube using scanning probe manipulation

Leif Roschier; Jari Penttilä; Michel Martin; Pertti Hakonen; Mikko Paalanen; Unto Tapper; Esko I. Kauppinen; Catherine Journet; Patrick Bernier

doi:10.1063/1.124495

Single-electron transistor made of multiwalled carbon nanotube using scanning probe manipulation

Leif Roschier, Jari Penttilä, Michel Martin, Pertti Hakonen, Mikko Paalanen, Unto Tapper, Esko I. Kauppinen, Catherine Journet, Patrick Bernier

Teknillisen fysiikan laitos

Tutkimustuotos: Lehtiartikkeli › Article › Scientific › vertaisarvioitu

95 Sitaatiot (Scopus)

213 Lataukset (Pure)

Abstrakti

A multiwalled carbon nanotube (MWNT) based single-electron transistors (SET) were manufactured using atomic force microscopy (AFM) manipulation. Its current-voltage characteristics were measured. Single-electron charging effects were shown through gate modulation. The results imply the MWNT to be semiconducting with a gap of 15 meV. The Coulomb staircase structure in the data agrees with the asymmetry of the tunnel junctions. The method combined with electron-beam soldering opens new possibilities to optimize junction parameters for specific purposes. This could give new opportunities in the fabrication of single electron transistors.

Alkuperäiskieli	Englanti
Sivut	728-730
Sivumäärä	3
Julkaisu	Applied Physics Letters
Vuosikerta	75
Numero	5
DOI - pysyväislinkit	https://doi.org/10.1063/1.124495
Tila	Julkaistu - 2 elokuuta 1999
OKM-julkaisutyyppi	A1 Julkaistu artikkeli, soviteltu

Tutkimusalat

carbon nanotube
single-electron transistor

Pääsy asiakirjaan

10.1063/1.124495

1.124495Final published version, 676 KB

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Link to publication in Scopus

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title = "Single-electron transistor made of multiwalled carbon nanotube using scanning probe manipulation",

abstract = "A multiwalled carbon nanotube (MWNT) based single-electron transistors (SET) were manufactured using atomic force microscopy (AFM) manipulation. Its current-voltage characteristics were measured. Single-electron charging effects were shown through gate modulation. The results imply the MWNT to be semiconducting with a gap of 15 meV. The Coulomb staircase structure in the data agrees with the asymmetry of the tunnel junctions. The method combined with electron-beam soldering opens new possibilities to optimize junction parameters for specific purposes. This could give new opportunities in the fabrication of single electron transistors.",

keywords = "carbon nanotube, single-electron transistor, carbon nanotube, single-electron transistor, carbon nanotube, single-electron transistor",

author = "Leif Roschier and Jari Penttil{\"a} and Michel Martin and Pertti Hakonen and Mikko Paalanen and Unto Tapper and Kauppinen, {Esko I.} and Catherine Journet and Patrick Bernier",

year = "1999",

month = aug,

day = "2",

doi = "10.1063/1.124495",

language = "English",

volume = "75",

pages = "728--730",

journal = "Applied Physics Letters",

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Single-electron transistor made of multiwalled carbon nanotube using scanning probe manipulation. / Roschier, Leif; Penttilä, Jari; Martin, Michel; Hakonen, Pertti ; Paalanen, Mikko; Tapper, Unto; Kauppinen, Esko I.; Journet, Catherine; Bernier, Patrick.

julkaisussa: Applied Physics Letters, Vuosikerta 75, Nro 5, 02.08.1999, s. 728-730.

Tutkimustuotos: Lehtiartikkeli › Article › Scientific › vertaisarvioitu

TY - JOUR

T1 - Single-electron transistor made of multiwalled carbon nanotube using scanning probe manipulation

AU - Roschier, Leif

AU - Penttilä, Jari

AU - Martin, Michel

AU - Hakonen, Pertti

AU - Paalanen, Mikko

AU - Tapper, Unto

AU - Kauppinen, Esko I.

AU - Journet, Catherine

AU - Bernier, Patrick

PY - 1999/8/2

Y1 - 1999/8/2

N2 - A multiwalled carbon nanotube (MWNT) based single-electron transistors (SET) were manufactured using atomic force microscopy (AFM) manipulation. Its current-voltage characteristics were measured. Single-electron charging effects were shown through gate modulation. The results imply the MWNT to be semiconducting with a gap of 15 meV. The Coulomb staircase structure in the data agrees with the asymmetry of the tunnel junctions. The method combined with electron-beam soldering opens new possibilities to optimize junction parameters for specific purposes. This could give new opportunities in the fabrication of single electron transistors.

AB - A multiwalled carbon nanotube (MWNT) based single-electron transistors (SET) were manufactured using atomic force microscopy (AFM) manipulation. Its current-voltage characteristics were measured. Single-electron charging effects were shown through gate modulation. The results imply the MWNT to be semiconducting with a gap of 15 meV. The Coulomb staircase structure in the data agrees with the asymmetry of the tunnel junctions. The method combined with electron-beam soldering opens new possibilities to optimize junction parameters for specific purposes. This could give new opportunities in the fabrication of single electron transistors.

KW - carbon nanotube

KW - single-electron transistor

KW - carbon nanotube

KW - single-electron transistor

KW - carbon nanotube

KW - single-electron transistor

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U2 - 10.1063/1.124495

DO - 10.1063/1.124495

M3 - Article

AN - SCOPUS:0032620842

VL - 75

SP - 728

EP - 730

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 5

ER -

Single-electron transistor made of multiwalled carbon nanotube using scanning probe manipulation

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