In situ monitoring of metal-organic vapor phase epitaxial growth of InGaAsN∕GaAs multiquantum wells is studied. The complex refractive index of InGaAsN is determined for several indium and nitrogen contents based on the fits to the reflectance curve. Taking advantage of the different effects caused by the incorporation of indium and nitrogen on the complex refractive index of InGaAsN, the InGaAsN quantum well nitrogen and indium contents are simultaneously determined in situ.
Reentilä, O., Mattila, M., Sopanen, M., & Lipsanen, H. (2006). Simultaneous determinationof indium and nitrogen contents of InGaAsN quantum wells by optical in-situ monitoring. Applied Physics Letters, 89(23), 1-3. . https://doi.org/10.1063/1.2402265