Simulation of photon transport in resonant double-diode structures

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussavertaisarvioitu

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Simulation of photon transport in resonant double-diode structures. / Kivisaari, Pyry; Partanen, Mikko; Sadi, Toufik; Oksanen, Jani.

Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII. toim. / Masakazu Sugiyama; Laurent Lombez; Laurent Lombez; Alexandre Freundlich. 2019. s. 1-7 109130A (Proceedings of SPIE - The International Society for Optical Engineering; Vuosikerta 10913).

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussavertaisarvioitu

Harvard

Kivisaari, P, Partanen, M, Sadi, T & Oksanen, J 2019, Simulation of photon transport in resonant double-diode structures. julkaisussa M Sugiyama, L Lombez, L Lombez & A Freundlich (toim), Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII., 109130A, Proceedings of SPIE - The International Society for Optical Engineering, Vuosikerta. 10913, Sivut 1-7, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices, San Francisco, Yhdysvallat, 05/02/2019. https://doi.org/10.1117/12.2506986

APA

Kivisaari, P., Partanen, M., Sadi, T., & Oksanen, J. (2019). Simulation of photon transport in resonant double-diode structures. teoksessa M. Sugiyama, L. Lombez, L. Lombez, & A. Freundlich (Toimittajat), Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII (Sivut 1-7). [109130A] (Proceedings of SPIE - The International Society for Optical Engineering; Vuosikerta 10913). https://doi.org/10.1117/12.2506986

Vancouver

Kivisaari P, Partanen M, Sadi T, Oksanen J. Simulation of photon transport in resonant double-diode structures. julkaisussa Sugiyama M, Lombez L, Lombez L, Freundlich A, toimittajat, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII. 2019. s. 1-7. 109130A. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.2506986

Author

Kivisaari, Pyry ; Partanen, Mikko ; Sadi, Toufik ; Oksanen, Jani. / Simulation of photon transport in resonant double-diode structures. Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII. Toimittaja / Masakazu Sugiyama ; Laurent Lombez ; Laurent Lombez ; Alexandre Freundlich. 2019. Sivut 1-7 (Proceedings of SPIE - The International Society for Optical Engineering).

Bibtex - Lataa

@inproceedings{81ffa6fdf43f4bb4822dce9b5a74f69d,
title = "Simulation of photon transport in resonant double-diode structures",
abstract = "The optical and electrical properties of planar optoelectronic devices are well known, but their fully self-consistent modeling has remained a serious challenge. At the same time, the improving device fabrication capabilities and shrinking device sizes make it possible to reach higher efficiencies and develop totally new device applications. Success in this context, however, requires sophisticated device modeling frameworks, such as fully self-consistent models of optical and electrical characteristics. In this article, we explore the predictions provided by the recently introduced interference radiative transfer (IRT) model and apply it to a simplified double-diode structure presently used to study the possibility of electroluminescent cooling. The purpose of this proof-of-principle study is to show that the IRT model is straightforward to implement once one has access to the dyadic Green's functions, and that it produces solutions that satisfy the more general quantized fluctuational electrodynamics framework. We examine the photon numbers, propagating optical intensities and net radiative recombination rates from the IRT model solved by assuming a constant quasi-Fermi level separation in the active region. We find that they behave qualitatively as expected for the chosen device structure. However, the results also exhibit waveoptical characteristics, as e.g. the propagating intensity depends non-monotonously on the propagation angle due to constructive and destructive interferences. Based on the results, the IRT model offers a promising way to self-consistently combine the modeling of photon and charge carrier dynamics, also fully accounting for all interference effects.",
keywords = "Drift-diffusion model, Dyadic Green's functions, Electroluminescent cooling, Fluctuational electrodynamics, Radiative transfer",
author = "Pyry Kivisaari and Mikko Partanen and Toufik Sadi and Jani Oksanen",
note = "| openaire: EC/H2020/638173/EU// iTPX",
year = "2019",
month = "1",
day = "1",
doi = "10.1117/12.2506986",
language = "English",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
pages = "1--7",
editor = "Masakazu Sugiyama and Laurent Lombez and Laurent Lombez and Alexandre Freundlich",
booktitle = "Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII",

}

RIS - Lataa

TY - GEN

T1 - Simulation of photon transport in resonant double-diode structures

AU - Kivisaari, Pyry

AU - Partanen, Mikko

AU - Sadi, Toufik

AU - Oksanen, Jani

N1 - | openaire: EC/H2020/638173/EU// iTPX

PY - 2019/1/1

Y1 - 2019/1/1

N2 - The optical and electrical properties of planar optoelectronic devices are well known, but their fully self-consistent modeling has remained a serious challenge. At the same time, the improving device fabrication capabilities and shrinking device sizes make it possible to reach higher efficiencies and develop totally new device applications. Success in this context, however, requires sophisticated device modeling frameworks, such as fully self-consistent models of optical and electrical characteristics. In this article, we explore the predictions provided by the recently introduced interference radiative transfer (IRT) model and apply it to a simplified double-diode structure presently used to study the possibility of electroluminescent cooling. The purpose of this proof-of-principle study is to show that the IRT model is straightforward to implement once one has access to the dyadic Green's functions, and that it produces solutions that satisfy the more general quantized fluctuational electrodynamics framework. We examine the photon numbers, propagating optical intensities and net radiative recombination rates from the IRT model solved by assuming a constant quasi-Fermi level separation in the active region. We find that they behave qualitatively as expected for the chosen device structure. However, the results also exhibit waveoptical characteristics, as e.g. the propagating intensity depends non-monotonously on the propagation angle due to constructive and destructive interferences. Based on the results, the IRT model offers a promising way to self-consistently combine the modeling of photon and charge carrier dynamics, also fully accounting for all interference effects.

AB - The optical and electrical properties of planar optoelectronic devices are well known, but their fully self-consistent modeling has remained a serious challenge. At the same time, the improving device fabrication capabilities and shrinking device sizes make it possible to reach higher efficiencies and develop totally new device applications. Success in this context, however, requires sophisticated device modeling frameworks, such as fully self-consistent models of optical and electrical characteristics. In this article, we explore the predictions provided by the recently introduced interference radiative transfer (IRT) model and apply it to a simplified double-diode structure presently used to study the possibility of electroluminescent cooling. The purpose of this proof-of-principle study is to show that the IRT model is straightforward to implement once one has access to the dyadic Green's functions, and that it produces solutions that satisfy the more general quantized fluctuational electrodynamics framework. We examine the photon numbers, propagating optical intensities and net radiative recombination rates from the IRT model solved by assuming a constant quasi-Fermi level separation in the active region. We find that they behave qualitatively as expected for the chosen device structure. However, the results also exhibit waveoptical characteristics, as e.g. the propagating intensity depends non-monotonously on the propagation angle due to constructive and destructive interferences. Based on the results, the IRT model offers a promising way to self-consistently combine the modeling of photon and charge carrier dynamics, also fully accounting for all interference effects.

KW - Drift-diffusion model

KW - Dyadic Green's functions

KW - Electroluminescent cooling

KW - Fluctuational electrodynamics

KW - Radiative transfer

UR - http://www.scopus.com/inward/record.url?scp=85066121014&partnerID=8YFLogxK

U2 - 10.1117/12.2506986

DO - 10.1117/12.2506986

M3 - Conference contribution

AN - SCOPUS:85066121014

T3 - Proceedings of SPIE - The International Society for Optical Engineering

SP - 1

EP - 7

BT - Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII

A2 - Sugiyama, Masakazu

A2 - Lombez, Laurent

A2 - Lombez, Laurent

A2 - Freundlich, Alexandre

ER -

ID: 34408720