Simple ALD process for ε-Fe2O3 thin films

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

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Atomic layer deposition (ALD) is an advanced industrially feasible technique for fabricating functional materials as high-quality thin films. Here we exploit the technique for the first time for growing thin films of the rare ε-Fe2O3 phase that has been found only in nanoscale samples. This single-metal single-valence oxide is receiving increasing interest due to its unusually high coercivity and multiferroic properties. With ALD, polycrystalline thin films of the ε-Fe2O3 phase are achieved on various substrate surfaces at a relatively low deposition temperature (260-300 °C) from FeCl3 and H2O precursors. The films are ferrimagnetic having an ∼1.6 kOe coercive field.

Yksityiskohdat

AlkuperäiskieliEnglanti
Artikkeli056104
JulkaisuAPL Materials
Vuosikerta5
Numero5
TilaJulkaistu - 1 toukokuuta 2017
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

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