Silicon nanostructere fabrication by focused ion beam doping and cryogenic deep reactive ion etching

Nikolai Chekurov; Kestutis Grigoras; Antti Peltonen; Sami Franssila; Ilkka Tittonen

Silicon nanostructere fabrication by focused ion beam doping and cryogenic deep reactive ion etching

Nikolai Chekurov, Kestutis Grigoras, Antti Peltonen, Sami Franssila, Ilkka Tittonen

Tutkimustuotos: Työpaperi › Working paper › Professional

Alkuperäiskieli	Englanti
Tila	Julkaistu - 2009
OKM-julkaisutyyppi	D4 Julkaistu kehittämis- tai tutkimusraportti taikka -selvitys

Julkaisusarja

Nimi	EIPBN 2009, June, Marco Island, USA

Tutkimusalat

deep reactive ion etching
focuse ion beam
nanofabrication

Siteeraa tätä

@techreport{58f62c75890841d9ba3e1cc880743ec8,

title = "Silicon nanostructere fabrication by focused ion beam doping and cryogenic deep reactive ion etching",

keywords = "deep reactive ion etching, focuse ion beam, nanofabrication, deep reactive ion etching, focuse ion beam, nanofabrication, deep reactive ion etching, focuse ion beam, nanofabrication",

author = "Nikolai Chekurov and Kestutis Grigoras and Antti Peltonen and Sami Franssila and Ilkka Tittonen",

year = "2009",

language = "English",

series = "EIPBN 2009, June, Marco Island, USA",

type = "WorkingPaper",

}

TY - UNPB

T1 - Silicon nanostructere fabrication by focused ion beam doping and cryogenic deep reactive ion etching

AU - Chekurov, Nikolai

AU - Grigoras, Kestutis

AU - Peltonen, Antti

AU - Franssila, Sami

AU - Tittonen, Ilkka

PY - 2009

Y1 - 2009

KW - deep reactive ion etching

KW - focuse ion beam

KW - nanofabrication

KW - deep reactive ion etching

KW - focuse ion beam

KW - nanofabrication

KW - deep reactive ion etching

KW - focuse ion beam

KW - nanofabrication

M3 - Working paper

T3 - EIPBN 2009, June, Marco Island, USA

BT - Silicon nanostructere fabrication by focused ion beam doping and cryogenic deep reactive ion etching

ER -