SiGe LNAs for UMTS system

Petteri Paatsila; Kari Stadius; Jussi Ryynänen; Kari Halonen

doi:10.1023/A:1008357801383

SiGe LNAs for UMTS system

Petteri Paatsila, Kari Stadius, Jussi Ryynänen, Kari Halonen

Atmel Finland Development Center Oy

Tutkimustuotos: Lehtiartikkeli › Article › Scientific › vertaisarvioitu

2 Sitaatiot (Scopus)

Abstrakti

Three LNAs at 2 GHz frequency range have been implemented in a SiGe Bipolar process targeted for a universal mobile telecommunications system. The LNAs are operating in two gain modes and they include a power-down mode. Both on-wafer and packaged LNAs were measured. Noise figure below 2 dB with IIP3 of 1 dBm and gain exceeding 15 dB has been achieved. LNAs work from a 2.7-5.5 V power supply. A figure of merit method is used to compare this work to other published LNAs.

Alkuperäiskieli	Englanti
Sivut	45-52
Sivumäärä	8
Julkaisu	Analog Integrated Circuits and Signal Processing
Vuosikerta	26
Numero	1
DOI - pysyväislinkit	https://doi.org/10.1023/A:1008357801383
Tila	Julkaistu - 2001
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

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10.1023/A:1008357801383

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title = "SiGe LNAs for UMTS system",

abstract = "Three LNAs at 2 GHz frequency range have been implemented in a SiGe Bipolar process targeted for a universal mobile telecommunications system. The LNAs are operating in two gain modes and they include a power-down mode. Both on-wafer and packaged LNAs were measured. Noise figure below 2 dB with IIP3 of 1 dBm and gain exceeding 15 dB has been achieved. LNAs work from a 2.7-5.5 V power supply. A figure of merit method is used to compare this work to other published LNAs.",

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AU - Paatsila, Petteri

AU - Stadius, Kari

AU - Ryynänen, Jussi

AU - Halonen, Kari

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Y1 - 2001

N2 - Three LNAs at 2 GHz frequency range have been implemented in a SiGe Bipolar process targeted for a universal mobile telecommunications system. The LNAs are operating in two gain modes and they include a power-down mode. Both on-wafer and packaged LNAs were measured. Noise figure below 2 dB with IIP3 of 1 dBm and gain exceeding 15 dB has been achieved. LNAs work from a 2.7-5.5 V power supply. A figure of merit method is used to compare this work to other published LNAs.

AB - Three LNAs at 2 GHz frequency range have been implemented in a SiGe Bipolar process targeted for a universal mobile telecommunications system. The LNAs are operating in two gain modes and they include a power-down mode. Both on-wafer and packaged LNAs were measured. Noise figure below 2 dB with IIP3 of 1 dBm and gain exceeding 15 dB has been achieved. LNAs work from a 2.7-5.5 V power supply. A figure of merit method is used to compare this work to other published LNAs.

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SiGe LNAs for UMTS system

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