Si nanoparticle interfaces in Si/SiO2 solar cell materials

S. Kilpeläinen; J. Kujala; F. Tuomisto; J. Slotte; Y.-W. Lu; A. Nylandsted Larsen

doi:10.1063/1.4824826

Si nanoparticle interfaces in Si/SiO₂ solar cell materials

S. Kilpeläinen, J. Kujala, F. Tuomisto, J. Slotte, Y.-W. Lu, A. Nylandsted Larsen

Teknillisen fysiikan laitos

Aarhus University

Tutkimustuotos: Lehtiartikkeli › Article › Scientific › vertaisarvioitu

5 Sitaatiot (Scopus)

86 Lataukset (Pure)

Abstrakti

Novel solar cell materials consisting of Si nanoparticles embedded in SiO2 layers have been studied using positron annihilation spectroscopy in Doppler broadening mode and photoluminescence. Two positron-trapping interface states are observed after high temperature annealing at 1100 °C. One of the states is attributed to the (SiO2/Si bulk) interface and the other to the interface between the Si nanoparticles and SiO2. A small reduction in positron trapping into these states is observed after annealing the samples in N2 atmosphere with 5% H2. Enhanced photoluminescence is also observed from the samples following this annealing step.

Alkuperäiskieli	Englanti
Artikkeli	164316
Sivut	1-4
Sivumäärä	4
Julkaisu	Journal of Applied Physics
Vuosikerta	114
Numero	16
DOI - pysyväislinkit	https://doi.org/10.1063/1.4824826
Tila	Julkaistu - 2013
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Tutkimusalat

nanoparticle
positron
silicon
silicon dioxide
solar cell

Pääsy asiakirjaan

10.1063/1.4824826

1%2E4824826Final published version, 670 KB

Siteeraa tätä

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title = "Si nanoparticle interfaces in Si/SiO2 solar cell materials",

abstract = "Novel solar cell materials consisting of Si nanoparticles embedded in SiO2 layers have been studied using positron annihilation spectroscopy in Doppler broadening mode and photoluminescence. Two positron-trapping interface states are observed after high temperature annealing at 1100 °C. One of the states is attributed to the (SiO2/Si bulk) interface and the other to the interface between the Si nanoparticles and SiO2. A small reduction in positron trapping into these states is observed after annealing the samples in N2 atmosphere with 5% H2. Enhanced photoluminescence is also observed from the samples following this annealing step.",

keywords = "nanoparticle, positron, silicon, silicon dioxide, solar cell, nanoparticle, positron, silicon, silicon dioxide, solar cell, nanoparticle, positron, silicon, silicon dioxide, solar cell",

author = "S. Kilpel{\"a}inen and J. Kujala and F. Tuomisto and J. Slotte and Y.-W. Lu and {Nylandsted Larsen}, A.",

year = "2013",

doi = "10.1063/1.4824826",

language = "English",

volume = "114",

pages = "1--4",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "16",

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TY - JOUR

T1 - Si nanoparticle interfaces in Si/SiO2 solar cell materials

AU - Kilpeläinen, S.

AU - Kujala, J.

AU - Tuomisto, F.

AU - Slotte, J.

AU - Lu, Y.-W.

AU - Nylandsted Larsen, A.

PY - 2013

Y1 - 2013

N2 - Novel solar cell materials consisting of Si nanoparticles embedded in SiO2 layers have been studied using positron annihilation spectroscopy in Doppler broadening mode and photoluminescence. Two positron-trapping interface states are observed after high temperature annealing at 1100 °C. One of the states is attributed to the (SiO2/Si bulk) interface and the other to the interface between the Si nanoparticles and SiO2. A small reduction in positron trapping into these states is observed after annealing the samples in N2 atmosphere with 5% H2. Enhanced photoluminescence is also observed from the samples following this annealing step.

AB - Novel solar cell materials consisting of Si nanoparticles embedded in SiO2 layers have been studied using positron annihilation spectroscopy in Doppler broadening mode and photoluminescence. Two positron-trapping interface states are observed after high temperature annealing at 1100 °C. One of the states is attributed to the (SiO2/Si bulk) interface and the other to the interface between the Si nanoparticles and SiO2. A small reduction in positron trapping into these states is observed after annealing the samples in N2 atmosphere with 5% H2. Enhanced photoluminescence is also observed from the samples following this annealing step.

KW - nanoparticle

KW - positron

KW - silicon

KW - silicon dioxide

KW - solar cell

KW - nanoparticle

KW - positron

KW - silicon

KW - silicon dioxide

KW - solar cell

KW - nanoparticle

KW - positron

KW - silicon

KW - silicon dioxide

KW - solar cell

U2 - 10.1063/1.4824826

DO - 10.1063/1.4824826

M3 - Article

SN - 0021-8979

VL - 114

SP - 1

EP - 4

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 16

M1 - 164316

ER -

Si nanoparticle interfaces in Si/SiO2 solar cell materials

Abstrakti

Tutkimusalat

Pääsy asiakirjaan

Sormenjälki

Siteeraa tätä

Si nanoparticle interfaces in Si/SiO₂ solar cell materials